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US 5,683,558 AGranted
Anode structure for magnetron sputtering systems
AssigneeThe BOC Group, Inc.
InventorsPeter A. Sieck, Russell J. Hill, John L. Vossen, Stephen C. Schulz
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AssigneeThe BOC Group, Inc.
InventorsPeter A. Sieck, Russell J. Hill, John L. Vossen, Stephen C. Schulz
Estimating the term…
An elongated anode structure having multiple points to which electrons are attracted is provided. The anode can be constructed of multiple wire brushes that are attached to a metal rod. Use of the anode in magnetron systems significantly reduces dielectric material build-up and improves film uniformity in both dc reactive and non-reactive sputtering. Moreover, the anode reduces overheating and increases the operation time of magnetron systems undergoing reactive sputtering of dielectric materials. In one embodiment, the magnetron system has a cylindrical cathode and a pair of elongated anodes positioned parallel to and equidistance from the cathode. The anode structure is particularly suited for sputtering uniform films of dielectric materials, including silicon dioxide and silicon nitride.
A sputtering apparatus anode device for use in the sputtering of dielectric material, comprising:
A plasma electrode for use in plasma applications, comprising an electrically conductive body and a plurality of points emanating from said conductive body, each of said points being defined by a tip of a wire.
Apparatus within a vacuum chamber for sputtering a thin film of material onto a position therein containing a substrate surface, comprising:
A method of sputtering a film of material onto a substrate from a target maintained at a negative voltage and positioned within a vacuum chamber into which a process gas is introduced, comprising operating, at a voltage that is more positive than that of the target, a plurality of anode surfaces within the chamber that are arranged with a variable density across the substrate in order to obtain a desired deposition rate profile thereacross.
Dependencies are inferred from the claim text.