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US 5,683,537 AGranted
Plasma processing apparatus
AssigneeTokyo Electron Limited
InventorNobuo Ishii
Life of this patent
Estimating the term…
Abstract
A plasma processing apparatus includes an air-tight chamber consisting of a conductive material, which is grounded, a susceptor provided in the air-tight chamber, for supporting a wafer to be processed, and an RF antenna constituted by a flat coil which is provided in the air-tight chamber to oppose, at a predetermined gap, the wafer which is mounted on the susceptor. A process gas is supplied into the chamber, and an RF power is applied to the RF antenna to generate a plasma between the antenna and the wafer, thereby processing the wafer with the plasma.
Claims16
A plasma processing apparatus comprising:
- an air-tight chamber at least part of which comprises an electric conductive material;
- supporting means, provided in said air-tight chamber, for supporting an object to be processed;
- means for supplying a process gas into said air-tight chamber;
- means for electrically grounding said conductive material of said air-tight chamber;
- a tubular antenna constituted by a flat coil which is provided in said air-tight chamber to oppose, at a gap, the object to be processed which is supported by said supporting means;
- and
- means for applying an RF power to said RF antenna in order to generate a plasma between said antenna and the object to be processed, thereby processing the object to be processed with the plasma;
- processing gas supplying means including
- a process guide path formed in said flat coil along said flat coil,
- communicating means, formed in said coil, for communicating an interior of said air-tight chamber and said process gas guide path with each other, and
- means for feeding a process gas into said process gas guide path, so that the fed process gas enters said air-tight chamber through said communicating means.
8 more elements
A plasma processing apparatus comprising:
- an air-tight chamber at least part of which comprises of an electric conductive material;
- supporting means, provided in said air-tight chamber, for supporting an object to be processed;
- means for supplying a process gas into said air-tight chamber;
- means for electrically grounding said conductive material of said air-tight chamber;
- an RF antenna constituted by a flat coil which is provided in said air-tight chamber to oppose, at a gap, the object to be processed which is supported by said supporting means;
- and
- means for applying an RF power to said RF antenna in order to generate a plasma between said antenna and the object to be processed, thereby processing the object to be processed with the plasma, said process gas supplying means including a tubular body, a gas mixing chamber, and a gas supply pipe, said tubular body extending through said air-tight chamber, being fixed to said air-tight chamber, defining a gas guide chamber therein, and having a large number of annularly arranged blow-off holes for communicating said guide chamber and an interior of said air-tight chamber with each other, said gas mixing chamber being arranged outside said air-tight chamber and communicating with said gas guide chamber, and said gas supply pipe supplying a process gas to said gas mixing chamber;
- and said antenna is mounted to said tubular body so as to be surrounded by the blow-off holes.
5 more elements
A plasma processing apparatus comprising:
- an air-tight chamber at least part of which comprises of an electric conductive material;
- supporting means, provided in said air-tight chamber, for supporting an object to be processed;
- means for supplying a process gas into said air-tight chamber;
- means for electrically grounding said conductive material of said air-tight chamber;
- an RF antenna constituted by a flat coil which is provided in said air-tight chamber to oppose, at a gap, the object to be processed which is supported by said supporting means;
- and
- means for applying an RF power to said RF antenna in order to generate a plasma between said antenna and the object to be processed, thereby processing the object to be processed with the plasma, said process gas supplying means including a tubular body, a gas mixing chamber, and a gas supply pipe, said tubular body extending through said air-tight chamber, being fixed to said air-tight chamber, defining a gas guide chamber therein, and having a large number of blow-off holes arranged for communicating said gas guide chamber and an interior of said air-tight chamber with each other, said gas mixing chamber being arranged outside said air-tight chamber and communicating with said gas guide chamber, and said gas supply pipe supplying a process gas to said gas mixing chamber;
- and said antenna is disposed in said gas guide chamber.
5 more elements
A plasma processing apparatus, comprising:
- an air-tight chamber;
- supporting means, provided in said air-tight chamber, for supporting an object to be processed;
- means for supplying a process gas into said air-tight chamber;
- an RF antenna provided in said air-tight chamber to oppose, at a gap, the object to be processed which is supported by said supporting means;
- means for applying an RF power to said RF antenna in order to generate a plasma between said antenna and the object to be processed, thereby processing the object to be processed with this plasma;
- and
- means for cooling said RF antenna;
- wherein said RF antenna has a flat coil and a protection layer formed on an outer circumferential surface of said flat coil and comprising an anti-corrosion material.
5 more elements
A plasma processing apparatus comprising:
- an air-tight chamber;
- supporting means, provided in said air-tight chamber, for supporting an object to be processed;
- means for supplying a process gas into said air-tight chamber;
- an RF antenna of a flat coil provided in said air-tight chamber to oppose, at a gap, the object to be processed which is supported by said supporting means;
- and
- means for applying an RF power to said RF antenna in order to generate a plasma between said antenna and the object to be processed, thereby processing the object to be processed with this plasma.
3 more elements
Dependencies are inferred from the claim text.