Rapid thermal processing apparatus for processing semiconductor wafers

A rapid thermal process reactor for processing a plurality of semiconductor wafers, comprising:

• a rapid thermal process reaction chamber;
• a rotatable susceptor mounted within the rapid thermal process reaction chamber having a first side and a second side opposite to and removed from said first side wherein said first side of the susceptor is adapted for mounting a plurality of substrates thereon;
• a plurality of substrate surround rings mounted on said first side wherein each substrate surround ring is formed with a recess on which one of said plurality of substrates is mounted;
• and
• a rapid thermal process heat source mounted outside the rapid thermal process reaction chamber wherein heat from the rapid thermal process heat source directly heats said plurality of substrates to a substantially uniform processing temperature in a time period characteristic of a rapid thermal process reactor.

A rapid thermal process reactor for processing a single semiconductor substrate having a diameter selected from a group of diameters consisting of 125 mm, 150 mm, 200 mm, 250 mm, 300 mm, 350 mm and 400 mm, the rapid thermal processing reactor comprising:

• a rapid thermal process reaction chamber;
• a rotatable susceptor mounted within the rapid thermal process reaction chamber, a first side of the susceptor adapted for mounting a substrate having a diameter selected from the group of diameters consisting of 125 mm, 150 mm, 200 mm, 250 mm, 300 mm, 350 mm and 400 mm wherein said rapid thermal process reaction chamber and said rotatable susceptor are sized such that each of said substrate diameters can be processed within said rapid thermal process reaction chamber;
• a substrate surround ring mounted on said first side wherein said substrate surround ring is formed with a recess on which said substrate is mounted;
• and
• a rapid thermal process heat source mounted outside the rapid thermal process reaction chamber so that heat from the rapid thermal process heat source directly heats the substrate to a substantially uniform processing temperature in a time period characteristic of a rapid thermal process reactor.