Single source metalloorgranic precursors to type 14-16 semiconductors
AssigneeRutgers, The State University
InventorsJohn Brennan, Yifeng Cheng
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AssigneeRutgers, The State University
InventorsJohn Brennan, Yifeng Cheng
Estimating the term…
The present invention relates to a single source metalloorganic precursor compound of the formula: (2-NR-Q-).sub.l M-A.sub.m (I=0-4, m=0-4, l+m=2 or 4) wherein M is selected form the Group 14 elements of Germanium, Tin or Lead; A and R are independently selected from: amide, alkyl having from 1 to 20 carbon atoms, aryl, substituted aryl, or -Q'-2-NR'L.sub.n (n=1-4) wherein L is selected from nothing or a Lewis base ligand; Q and Q' are each independently selected from Group VIa elements of sulfur, selenium, or tellurium; and 2-NR and 2-NR' are each independently selected from N-heterocyclic aryl or its derivatives. Methods of producing these compounds are also disclosed. These precursor materials provide in a single compound the binary, tertiary, or quaternary metals in a ratio to each other that is controllable by a judicious choice of metal atoms and organic substituents. The metal alloys are useful in a variety for electronic applications, particularly in semiconductors and solar energy.
A single source metalloorganic 14-16 semiconductor precursor compound of the formula:
A process for the production of a single source metalloorganic 14-16 semiconductor precursor compound for the formula:
A process for the production of a di-, tri-, or tetra- metal alloy, which process comprises:
Dependencies are inferred from the claim text.