# US 5,679,043 A · Method of making a field emitter > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 5,679,043 A - Document ID: US5679043A - Status: Granted - Kind: A - Application number: 08/457,962 - Filed: 1995-06-01 - Granted: 1997-10-21 - Earliest claimed: 1992-03-16 - Assignees: Microelectronics and Computer Technology Corporation; SI Diamond Technology, Inc. - Inventors: Nalin Kumar - Web page: https://patentgrep.com/patent/US5679043A ## CPC - H01J 9/027: {of thin film cathodes} - H01J 1/304: Field-emissive cathodes - H01J 1/316: having an electric field parallel to the surface, e.g. thin film cathodes - H01J 61/0677: {characterised by the electron emissive material} - H01J 63/06: Lamps with luminescent screen excited by the ray or stream - H01J 2201/30426: Coatings on the emitter surface, e.g. with low work function materials - H01J 2201/30457: Diamond - H01J 2329/00: Electron emission display panels, e.g. field emission display panels - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract A matrix addressable flat panel display includes a flat cathode operable for emitting electrons to an anode when an electric field is produced across the surface of the flat cathode by two electrodes placed on each side of the flat cathode. The flat cathode may consist of a cermet or amorphic diamond or some other combination of a conducting material and an insulating material such as a low effective work function material. The electric field produced causes electrons to hop on the surface of the cathode at the conducting-insulating interfaces. An electric field produced between the anode and the cathode causes these electrons to bombard a phosphor layer on the anode. ## Claims ### Claim 1 A method of making a field emitter device, comprising the steps of: providing a substrate; depositing a layer of a low effective work function material on said substrate; depositing a first layer of a conductive material in a first location near said layer of said low effective work function material; and depositing a second separate layer of said conductive material in a second location near said layer of said low effective work function material, said first and second locations positioned relative to each other and to said layer of said low effective work function material so that said first and second layers of said conductive material are operable to produce an electric field across a surface of said layer of said low effective work function material when a voltage potential is applied between said first and second layers of said conductive material. ### Claim 2 (depends on 1) The method as recited in claim 1, wherein said low effective work function material is non-homogenous. ### Claim 3 (depends on 1) The method as recited in claim 1, wherein said low effective work function material is a cermet. ### Claim 4 (depends on 1) The method as recited in claim 1, wherein said low effective work function material is amorphic diamond. ### Claim 5 (depends on 1) The method as recited in claim 1, wherein said low effective work function material is CVD diamond film. ### Claim 6 (depends on 1) The method as recited in claim 1, wherein said layer of said low effective work function material is a thin film between 100 and 10,000 angstroms thick. ### Claim 7 (depends on 1) The method as recited in claim 1, wherein said first and second locations are each adjacent to said layer of said low effective work function material on opposite sides of said layer of said low effective work function material. ### Claim 8 (depends on 1) The method as recited in claim 1, wherein said conductive material is chromium. ### Claim 9 (depends on 1) The method as recited in claim 1, wherein said conductive material is titanium. ### Claim 10 (depends on 1) The method as recited in claim 1, wherein said layer of said low effective work function material has a substantially flat upper surface. ### Claim 11 (depends on 10) The method as recited in claim 10, wherein said substantially flat upper surface is substantially parallel to an upper surface of said substrate. ### Claim 12 A method of making a display device comprising the steps of: depositing a patch of a low effective work function material on a substrate; depositing on said substrate a first contact of conductive material adjoining a first side of said patch of said low effective work function material; and depositing on said substrate a second contact of conductive material adjoining a second side of said patch of said low effective work function material. ### Claim 13 (depends on 12) The method as recited in claim 12, further comprising the steps of: positioning an anode substrate a distance away from said substrate supporting said low effective work function material; depositing a conductive material on said anode substrate; and depositing a luminescent material on said conductive material deposited on said anode substrate. ### Claim 14 (depends on 12) The method as recited in claim 12, wherein said layer of said low effective work function material has a substantially flat upper surface. ### Claim 15 (depends on 14) The method as recited in claim 14, wherein said substantially flat upper surface is substantially parallel to an upper surface of said substrate. ### Claim 16 (depends on 12) The method as recited in claim 12, wherein said first and second contacts of conductive material are formed so that they are operable for producing an electric field across a surface of said low effective work function material when a voltage potential is applied between said first and second contacts of conductive material. ### Claim 17 (depends on 16) The method as recited in claim 16, wherein said steps of depositing on said substrate said first and second contacts of conductive material are performed during the same deposition process. ### Claim 18 (depends on 16) The method as recited in claim 16, wherein said steps of depositing on said substrate said first and second contacts of conductive material are performed before said step of depositing said patch of said low effective work function material on said substrate. ### Claim 19 (depends on 12) The method as recited in claim 12, wherein said low effective work function material is non-homogenous, having at least one conducting-insulating interface. ### Claim 20 (depends on 19) The method as recited in claim 19, wherein said low effective work function material is a cermet. ### Claim 21 (depends on 19) The method as recited in claim 19, wherein said low effective work function material is amorphic diamond. ### Claim 22 (depends on 19) The method as recited in claim 19, wherein said low effective work function material is CVD diamond film. ### Claim 23 (depends on 19) The method as recited in claim 19, whereto said layer of said low effective work function material is a thin film between 100 and 10,000 angstroms thick.