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US 5,677,572 AGranted
Bilayer electrode on a n-type semiconductor
AssigneeEastman Kodak Company
InventorsLiang-Sun Hung, Ching Wan Tang
Life of this patent
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Abstract
An electrode in contact with a n-type semiconductor for use in an electronic or optoelectronic device is disclosed. The electrode includes a non-conducting layer contacting the semiconductor; a conductive layer contacting the non-conducting layer, and the materials and the thickness of the non-conducting layer being selected so that the bilayer forms a low-resistance contact to the semiconductor, the bilayer providing stability against atmospheric corrosion.
Claims14
A bilayer electrode in contact with a n-type semiconductor, comprising:
- a) a thin non-conducting layer contacting the n-type semiconductor, the layer having a strong dipole character such as alkali or alkaline earth metal fluorides or oxides;
- b) a conductive layer contacting the non-conducting layer, the layer having a good stability against atmospheric oxidation;
- and
- c) the thickness of the non-conducting layer being selected so that the bilayer forms a contact with a low barrier height, the bilayer providing stability against atmospheric corrosion.
1 more element
Dependencies are inferred from the claim text.