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US 5,675,605 AGranted
Semiconductor surface-emitting optical device having light emitting layer of ordered crystal structure sandwiched between bragg reflectors
AssigneeNEC Corporation
InventorHiroaki Fujii
Life of this patent
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Abstract
An active layer incorporated in a semiconductor surface-emitting optical device is formed of the ordered crystal of GaInP or AlGaInP so that unisotropical photoluminescent characteristics take place in the light generation, and the semiconductor surface-emitting optical device selectively oscillates at a plane of polarization.
Claims9
A semiconductor surface-emitting optical device comprising:
- an active layer having an ordered crystal structure, and serving as a light-emitting layer;
- and
- clad layers of a type serving as a Bragg reflector sandwiching said active layer for highly reflecting emitted light.
A semiconductor surface-emitting optical device comprising:
- an active layer having an ordered crystal structure so as to selectively control a plane of polarization for an output light, and serving as a light-emitting layer;
- and
- clad layers of a type serving as a Bragg reflector sandwiching said active layer for highly reflecting emitted light.
A semiconductor surface-emitting optical device comprising:
- a substrate of a first conductivity type having a major surface;
- a first clad layer of said first conductivity type formed on said major surface;
- an active layer having at least one light generating layer formed from an ordered crystal of a compound semiconductor material;
- a second clad layer having a second conductivity type opposite to said first conductivity type, and formed on said active layer so as to form a Bragg reflector together with said first clad layer;
- and
- electrodes connected to a back surface of said substrate and an upper surface of said second clad layer, respectively, so as to apply a potential to said active layer.
3 more elements
Dependencies are inferred from the claim text.