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US 5,675,597 AGranted
Semiconductor laser device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorKimio Shigihara
Life of this patent
Estimating the term…
Abstract
A semiconductor laser device includes a semiconductor laser chip emitting a laser light from its front facet and rear facet, a photodiode which receives the light emitted from the rear facet of said semiconductor laser chip, an upper end of the light receiving surface of said photodiode being positioned at a height equal to or lower than the light emitting position of said semiconductor laser chip. Therefore, the return light which returns the monitor photodiode is reduced and the controllability of the APC control can be enhanced.
Claims17
A semiconductor laser device comprising:
- a laser mount;
- a semiconductor laser chip for emitting laser light from a front facet and from a rear facet along an optical axis, the semiconductor laser chip having opposed, generally planar top and bottom surfaces transverse to the front and rear facets and being mounted at the bottom surface to the laser mount;
- and
- a photodiode positioned for detecting the laser light emitted from the rear facet of said semiconductor laser chip, the photodiode having a light sensitive surface terminating at an edge, the edge being positioned opposite the rear facet of the semiconductor laser chip between planes respectively including the top and bottom surfaces whereby the photodiode is shielded by the semiconductor laser chip from laser light emitted from the front facet and reflected toward the semiconductor laser chip.
1 more element
A semiconductor laser device comprising:
- a semiconductor laser chip for emitting a laser light beam from a front facet and a laser light beam from a rear facet along an optical axis;
- and
- a photodiode positioned for detecting light emitted from the rear facet of the semiconductor laser chip, the photodiode having a light sensitive surface terminating at an edge, wherein light emitted from the rear facet of the semiconductor laser chip reaches the light sensitive surface of the photodiode, and the edge of the light detecting surface of the photodiode is positioned within .+-.100 .mu.m of a point 1/e of a peak intensity of the laser light beam emitted from the rear facet of the semiconductor laser chip.
Dependencies are inferred from the claim text.