Overcurrent detection circuit for a power MOSFET and method therefor
AssigneeMotorola, Inc.
InventorsThomas D. Petty, Troy L. Stockstad, Warren J. Schultz
Life of this patent
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AssigneeMotorola, Inc.
InventorsThomas D. Petty, Troy L. Stockstad, Warren J. Schultz
Estimating the term…
An overcurrent detector circuit (21) for a power MOSFET (22) is described. The overcurrent detector circuit (21) generates a bias voltage corresponding to the drain to source voltage of the power MOSFET (22). The drain to source voltage correlates directly to the current being conducted by the power MOSFET (22). An overcurrent condition occurs when the power MOSFET (22) exceeds a predetermined current. The bias voltage is applied to a transistor (24) for generating a current. A current source (29) couples to the transistor (24). The current provided by the transistor equals the reference current of the current source (29) when the power MOSFET conducts the predetermined current. The overcurrent detector circuit (21) generates a signal indicating a overcurrent condition does not exist when the reference current is greater the current provided by the transistor. Conversely, the overcurrent detector circuit (21) generates a signal indicating the overcurrent condition when the current provided by the transistor exceeds the reference current.
An overcurrent detector circuit for detecting when a predetermined current of a power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is exceeded, the overcurrent detector circuit having an input and an output, the power MOSFET having a drain coupled to the input of the overcurrent detector circuit, a gate coupled for receiving a control signal, and a source coupled for receiving a first power supply voltage, the overcurrent detector circuit comprising:
Dependencies are inferred from the claim text.