Linear solid state imaging device with trapizoid type photodiodes

A linear solid state imaging device, comprising:

• a first conductivity type silicon substrate;
• a first well of a second conductivity type, formed in one surface portion of the substrate and having a predetermined junction depth;
• a second well of a second conductivity type and formed in deeper junction depth than that of the first well and in another surface portion of the substrate;
• a channel stop area of the second conductivity type for isolating photodiode cells from each other by means of a potential barrier;
• a plurality of trapezoid-type photodiode areas for generating signal charges, wherein the trapezoid type areas are linearly arranged in the first well and except for one side of parallel sides of the trapezoid area, other sides are surrounded by the channel stop area;
• a pair of horizontal charge coupled device (HCCD) areas of the first conductivity type formed in the second well and having a main HCCD area in a rectangular shape and protrusion areas;
• a shift gate formed over the substrate between the photodiode areas and the HCCD areas and for transferring the accumulated charges in the photodiode areas to the HCCD areas;
• a plurality of shift gate channel areas of the second conductivity type formed in the first well underneath the shift gate and having a six-sided shape one side of which is in contact with a photodiode area, another side of which has a V-shaped depression and other sides of which are surrounded by the channel stop area;
• a plurality of potential barrier formation areas formed proximate a top surface of the photodiode areas;
• a poly gate disposed over the substrate in which HCCD areas are formed and for transferring charges from the photodiode areas;
• and
• an insulating layer formed between the shift gate and the poly gate and providing insulation therebetween.