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US 5,675,157 AGranted
Transferred electron effect device
AssigneeU.S. Philips Corporation
InventorStephen J. Battersby
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AssigneeU.S. Philips Corporation
InventorStephen J. Battersby
Estimating the term…
A semiconductor body (2) has an active region (6) of n conductivity type formed of a material having a relatively low mass, high mobility conduction band main minimum and at least one relatively high mass, low mobility conduction band satellite minimum and an injector region (9) defining a potential barrier (P) to the flow of electrons into the active region (6) of a height such that, in operation of the device, electrons with sufficient energy to surmount the barrier (P) provided by the injector region (9) are emitted into the active region (6) with an energy comparable to that of the at least one relatively high mass, low mobility conduction band satellite minimum. An electron containing well region (10a, 10b) of a material different from that of the active region (6) and of the injector region (9) is provided between the injector region (9) and the active region (6) for inhibiting the spread of a depletion region into the active region (6) during operation of the device.
A transferred electron effect device comprising a semiconductor body having an active region of n conductivity type formed of a material having a relatively low mass, high mobility conduction band main minimum and at least one relatively high mass, low mobility conduction band satellite minimum and an injector region defining a potential barrier to the flow of electrons into the active region of a height such that, in operation of the device, electrons with sufficient energy to surmount the barrier provided by the injector region are emitted into the active region with an energy comparable to that of the at least one relatively high mass, low mobility conduction band satellite minimum, characterised in that an electron-containing well region of a material different from that of the active region and of the injector region is provided between the injector region and the active region for inhibiting the spread of a depletion region into the active region during operation of the device.
A transferred electron effect device comprising a semiconductor body having an active region comprising indium phosphide doped so as to be n conductivity type, anode and cathode semiconductor regions spaced apart by the active region and each comprising semiconductor regions highly doped so as to be n conductivity type and anode and cathode electrodes contacting the anode and cathode regions, respectively, characterised in that the anode and cathode regions comprise highly n conductivity type gallium indium arsenide regions forming ohmic contacts with the anode and cathode electrodes, respectively.
Dependencies are inferred from the claim text.