Back to results
US 5,675,028 AGranted
Bisamido azides of gallium, aluminum and indium and their use as precursors for the growth of nitride films
AssigneeBoard of Regents, The University of Texas System
InventorsDeborah Ann Neumayer, Vikas Lakhotia
Life of this patent
Estimating the term…
Abstract
There are disclosed bisamido azides of gallium (Ga), aluminum (Al), or Indium (In) which when pyrolized in accordance with the invention, produce metal nitride films on a substrate. A representative example of a bisamido azide is bisdimethylamidogallium azide, (CH.sub.3)N).sub.2 GaN.sub.3.
Claims13
A bisamido azide of Ga, Al or In.
The bisamido azide of the formula (RR'N).sub.2 M--N.sub.3 !.sub.n wherein R and R' are independently hydrogen, alkyl, alkyl amine, aryl, alkyl-substituted aryl, alkyl-substituted silyl, halide or together form a cycloalkyl;
- wherein M is Ca, Al or In;
- and
- wherein n is from 1 to about 6.
Dependencies are inferred from the claim text.