Method and apparatus for fabrication of dielectric thin film

An apparatus for fabricating dielectric thin films formed of ABO.sub.3 perovskite type composite compounds composed of a site A having at least one element selected from the group consisting of lead, barium, strontium and lanthanum, a site B having at least one element selected from the group consisting of titanium and zirconium, and oxygen, said apparatus comprising:

• a heater suitable for maintaining a substrate at a temperature at which perovskite type crystalline thin films are obtained;
• means for depositing thin films on a plurality of substrates using a plurality of multi-component material sputter targets of a same composition;
• and
• means for stabilizing the crystal grains of said thin films, wherein said depositing and said stabilizing functions are repetitively performed by periodically alternating the deposition of the thin films and stabilization of the thin films on said substrates.

A sputtering apparatus for fabricating dielectric thin films formed on ABO.sub.3 perovskite type composite compounds composed of a site A having at least one element selected from the group consisting of lead, barium, strontium and lanthanum, a site B having at least one element selected from the group consisting of titanium and zirconium, and oxygen, said apparatus comprising:

• at least one ferroelectric material sputter target for depositing thin films on a substrate;
• a rotative substrate holder on which a plurality of substrates are disposed;
• a heater for maintaining a substrate temperature within a range from about 550.degree. C. to about 650.degree. C.;
• and
• a slitting plate having a hole therein, said slitting plate disposed between said sputter target and said rotative substrate holder for repetitively and periodically alternating the deposition of the thin films and stabilization of said thin films on said substrates to stabilize the crystal grains of said thin films.