Memory material and method for its manufacture

A non-volatile, random-accessible memory device comprising:

• a substrate having first and second surfaces;
• a first address line formed on the first surface of the substrate;
• a second address line formed on the second surface of the substrate;
• a first composition of materials formed on the first surface of the substrate, the first composition of materials having ferromagnetic and piezoelectric properties and comprising the elements of Pb, Cd, Fe, Cr, Zn and an element selected from a group consisting of Te and Tl;
• and
• a second composition of materials formed on the second surface of the substrate, the second composition of materials having ferromagnetic and piezoelectric properties and comprising the elements of Pb, Cd, Fe, Cr, Zn and an element selected from a group consisting of Te and Tl,
• the first and the second compositions of materials comprising a first layer of material formed on the substrate and a second layer of material formed on the first layer, the first layer of material comprising the elements of Pb, Cd, and Fe, wherein the ratio between Pb, Cd, and Fe in the first layer is (1-x-y):x:y where the values of (1-x-y), x and y are within the ranges of 0.ltoreq.(1-x-y).ltoreq.1, 0.ltoreq.x.ltoreq.1, and 0.ltoreq.y.ltoreq.1, and the second layer of material comprising elements of Cr, Zn, and R where R is an element selected from the group consisting of Te and Tl, wherein the ratio between Cr, Zn and R in the second layer is (1-z-w):z:w where the values of (1-z-w), z and w are within the ranges of 0.ltoreq.(1-z-w).ltoreq.1, 0.ltoreq.z.ltoreq.1, and 0.ltoreq.w.ltoreq.1.