Nonvolatile semiconductor integrated circuit having an address transition detector
AssigneeSamsung Electronics Co., Ltd.
InventorsCheol-Ung Jang, Hyong-Gon Lee, Sung-Hee Cho
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Abstract
A semiconductor integrated circuit having an address transition detector includes a power detecting circuit connected to a source terminal for detecting a voltage level of the source terminal, a pulse generating circuit for receiving an address signal and generating a pulse when the address signal is changed, and a summator for combining outputs of the power detecting circuit and the pulse generating circuit and generating a given pulse when the outputs vary.
Claims7
An address transition detecting circuit for use in a semiconductor integrated circuit, said address transition detecting circuit comprising:
- power detecting means operably connected to a power source, for detecting a voltage level of said power source and outputting a power detection signal indicative of said voltage level, said power detecting means continuously generating said power detection signal throughout operation of said semiconductor integrated circuit;
- first pulse generating means for receiving address signals and generating a first pulse when any address signal differs from an immediately preceding address signal;
- and
- summating means for receiving said power detection signal of said power detecting means and said first pulse of said first pulse generating means and generating an output pulse when said summating means has received said first pulse and said power detecting means detects that said power source is at a predetermined level.
A semiconductor integrated circuit having a memory cell array, and a decoder for designating a memory cell within said memory cell array by decoding an address signal applied from an exterior circuit, said semiconductor integrated circuit comprising:
- address transition detecting means for sensing a transition of said address signal;
- precharging and equalizing means for receiving an output signal of said address transition detecting means and generating a precharge signal and an equalizing signal;
- voltage detecting means for generating a voltage detecting signal by sensing a level of an exterior power supply voltage;
- sense amplifier and data latch control means for receiving said equalizing signal and generating a sense amplifier control signal and a data latch control signal in response to said voltage detecting signal;
- and
- sense amplifier and data latch means for receiving said precharge signal, said data latch control signal, and said sense amplifier control signal, and for controlling transmission of data to and from said memory cell.
Dependencies are inferred from the claim text.