Resin-sealed type semiconductor device and method for manufacturing the same
AssigneeSharp Kabushiki Kaisha
InventorsKazumasa Aoki, Yoshiki Sota
Life of this patent
Estimating the term…
Abstract
A resin-sealed type semiconductor device comprising a semiconductor chip having an electrode pad, a wiring component composed of a wiring layer formed on one side of an insulating board, a through-hole penetrating through the insulating board and a projecting electrode formed on the other side of the insulating board and at the position corresponding to the through-hole, wherein the semiconductor chip and the wiring component are disposed so that the electrode pad and the projecting electrode are welded together, and at least the gap between the semiconductor chip and the wiring component is sealed with a resin.
Claims11
A resin-sealed type semiconductor device comprising:
- a semiconductor chip having an electrode pad;
- a wiring component composed of a wiring layer formed on one side of an insulating board, a through-hole penetrating through the insulating board and a projecting electrode formed on the other side of the insulating board and at the position corresponding to the through-hole;
- said semiconductor chip and said wiring component being disposed so that the electrode pad and the projecting electrode are welded together, and at least the gap between the semiconductor chip and the wiring component is sealed with a resin, the insulating board having a surface along one side thereof and a groove in said surface only partially penetrating between opposite sides of said insulating board.
A method for manufacturing a resin-sealed type semiconductor device, the method comprising the steps of:
- forming a wiring layer on one side of an insulating board;
- forming a through-hole penetrating through the insulating board;
- the through-hole opening on the other side of the insulating board at a position corresponding to the location of an electrode pad of a semiconductor chip to be welded;
- forming a wiring component by forming a projecting electrode on the wiring layer and through the through-hole, said wiring component and said semiconductor chip having different coefficients of thermal expansion;
- sealing at least the gap between the semiconductor chip and the wiring component with a resin;
- welding the electrode pad and the projecting electrode together by heating the wiring layer;
- and
- forming a groove in a surface of said insulating board to compensate for differential contraction of the semiconductor chip and insulating board, subsequent to welding and without complete penetration between opposite sides of said insulating board, thereby alleviating shear stress generated at the weld between the electrode pad and the projecting electrode.
Dependencies are inferred from the claim text.