Semiconductor pressure sensor
AssigneeHitachi, Ltd.
InventorsHideo Suzuki, Ken Takahashi, Yukio Takahashi, Yoshimi Yamamoto, Kenichi Aoki, Tomoyuki Tobita
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AssigneeHitachi, Ltd.
InventorsHideo Suzuki, Ken Takahashi, Yukio Takahashi, Yoshimi Yamamoto, Kenichi Aoki, Tomoyuki Tobita
Estimating the term…
The present invention provides a semiconductor pressure sensor having a glass base and a metal base bonded together satisfactorily so that a silicon diaphragm may not be affected by residual strain, and an intelligent differential pressure and pressure transmitting device employing the semiconductor pressure sensor. The semiconductor pressure sensor comprises a silicon diaphragm (1) provided with a strain-sensitive element, a glass or ceramic base (2) bonded to the silicon diaphragm (1), and a metal base (4) bonded to the glass or ceramic base (2) with a bonding glass (3). The thermal expansion coefficient of the metal base (4) at a temperature corresponding to the strain point of the bonding glass (3) is not greater than that of the glass or ceramic base (2).
A semiconductor pressure sensor comprising:
Dependencies are inferred from the claim text.