US 5,672,760 AGranted

Ablatively photodecomposable compositions

AssigneeInternational Business Machines Corporation

InventorsFrancis Charles Burns, William Weathers Fleming, Victor Yee-Way Lee, Randy William Snyder

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Abstract

The present invention provides an ablatively photodecomposable polymer having a photoabsorber bound to the polymer (the "ablatively photodecomposable polymer") which does not phase separate, nor does it crystallize. The ablatively photodecomposable polymer provides even ablation, high resolution and in preferred embodiments, can withstand potassium permanganate etchant and ferric chloride etchant. The ablatively photodecomposable polymer is strippable, although it can remain on the substrate if desired. The ablatively photodecomposable polymer comprises a polymer to which a photoabsorber is bound, either covalently or ionically. The present invention is also directed to a process for forming a metal pattern on a substrate employing the ablatively photodecomposable polymer.

Claims1

Dependent claims

A method for making 4-(2-hydroxyethyl)ethylamino!-4'-(trifluoromethylsulfonyl)tolane comprising the following steps:

a. first providing (2-hydroxyethyl)ethylaniline;
b. iodinating the (2-hydroxyethyl)ethylaniline to produce 4-(2-hydroxyethyl)ethylamino!iodobenzene;
c. adding a trimethylsilyl group to the 4-(2-hydroxyethyl)ethylamino!iodobenzene to produce 4-(2-trimethylsiloxyethyl)ethylamino!iodobenzene;
d. substituting a trimethylsilylethynyl group for the iodo group on 4-(2-trimethylsiloxyethyl)- ethylamino!iodobenzene to produce 4-(2-trimethylsiloxy-ethyl)ethylamino!trimethylsilylethynylbenzene;
e. removing the trimethylsilyl groups on the 4-(2-trimethylsiloxyethyl)ethylamino!tri-methylsilylethynylbenzene to produce 4-(2-hydroxyethyl)ethylamino!ethynylbenzene;
f. adding 4-trifluoromethylsulfonyl benzene to 4-(2-hydroxyethyl)ethylamino!ethynylbenzene to produce 4-(2-hydroxyethyl)ethylamino!-4'-(trifluoromethylsulfonyl)tolane.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 08/629,649Filed 9 Apr 1996 · division
Priority: 7 Jun 1995
Granted: 30 Sep 1997
Term ends: Not estimatedThe source records don’t support an estimate.

Classification21 codes

G03F 7/202
Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing: masking pattern…
C07C 315/04
Preparation of sulfones; Preparation of sulfoxides: by reactions not involving the formation of sulfone or sulfoxide groups
G03F 7/039
Photosensitive materials: macromolecular compounds which are photodegradable, e.g. positive electron resists
G03F 7/2053
Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an…:…