Method of forming multiple gate oxide thicknesses on a wafer substrate
AssigneeAdvanced Micro Devices, Inc.
InventorsRadu M. Barsan, Xiao-Yu Li, Sunil Mehta
Life of this patent
Estimating the term…
Abstract
An integrated circuit device and manufacturing process wherein a first region is formed in a substrate with a dopant that enhances oxide formation and a second region is formed in the substrate with a dose of nitrogen that retards oxide formation. An oxide layer is grown over the first and the second regions and over a third region of the substrate such that the first, second, and third regions yield differing thicknesses of the oxide layer.
Claims24
An integrated circuit manufacturing process, comprising the steps of:
- forming a first region in a substrate wherein the first region contains a dopant that enhances oxide formation;
- forming a second region in the substrate wherein the second region contains a dose of nitrogen that retards oxide formation;
- forming an oxide layer over the first and the second regions and over a third region of the substrate such that the first, second, and third regions yield differing thicknesses of the oxide layer.
The process of claim 5, wherein the dopant in the first region is selected to form a programming junction for a non-volatile memory or programmable logic device.
An integrated circuit manufacturing process, comprising the steps of:
- forming a first region in a substrate wherein the first region contains a dopant that enhances oxide formation on the first region;
- implanting a dose of nitrogen into the first region and into a second region in the substrate such that the dose of nitrogen retards oxide formation on the first and the second regions;
- forming an oxide layer over the first and the second regions and over a third region of the substrate such that the first, second, and third regions yield differing thicknesses of the oxide layer.
An integrated circuit manufacturing process, comprising the steps of:
- forming a first region in a substrate wherein the first region contains a dopant that enhances oxide formation on the first region;
- forming a first oxide layer on the substrate;
- implanting a dose of nitrogen into a second region in the substrate through the first oxide layer such that the dose of nitrogen retards oxide formation on the second region;
- removing the first oxide layer over the first and the second regions;
- forming a second oxide layer over the first and the second regions and over a third region of the substrate such that the first and the second regions yield differing thicknesses of the second oxide layer and the first and second oxide layers combine over the third region.
Dependencies are inferred from the claim text.