Method of fabricating semiconductor device having stacked layered substrate

A method of fabricating a semiconductor device, comprising the steps of:

• forming a substrate having a stacked-layered structure comprised of a transparent support substrate, a light shielding layer formed on the support substrate, an insulating layer formed on the light-shielding layer, and a semiconductor single crystal layer formed on the insulating layer;
• selectively etching the light-shielding layer to form a light shielding layer pattern by forming a photosensitive film on the semiconductor single crystal layer, patterning the photosensitive film to the shape of the pattern of the light-shielding layer, and selectively etching the stacked-layered structure using the patterned photosensitive film as a mask;
• and thereafter forming a transistor switching element having a channel region formed in and constituting part of the semiconductor single crystal layer and having a main gate electrode formed over and being electrically insulated from the channel region;
• wherein the channel region is provided over the light shielding layer pattern to prevent light incident from the transparent support substrate from illuminating the channel region to suppress a photo-induced current in the channel region.

A method of fabricating a semiconductor device, comprising the steps of:

• preparing a support substrate;
• bonding a semiconductor single crystal wafer to the support substrate;
• thinning the semiconductor single crystal wafer to a semiconductor single crystal thin film;
• and forming a transistor element having a channel region formed in the semiconductor single crystal thin film and having a gate electrode formed over and electrically insulated from the channel region, wherein the support substrate is a transparent support substrate, the step of preparing the transparent support substrate includes forming a light-shielding layer on the transparent support substrate, and the step of forming the transistor element includes forming the channel region over the light-shielding layer.

A method of fabricating a semiconductor device, comprising the steps of:

• forming a substrate having a stacked-layered structure comprised of a transparent support substrate, a light shielding layer formed on the support substrate, an insulating layer formed on the light-shielding layer, and a semiconductor single crystal layer formed on the insulating layer, wherein the semiconductor single crystal layer is thermally bonded to the insulating layer by thermocompression bonding;
• selectively etching the light-shielding layer to form a light shielding layer pattern;
• and thereafter forming a transistor switching element having a channel region formed in and constituting part of the semiconductor single crystal layer and having a main gate electrode formed over and being electrically insulated from the channel region;
• wherein the channel region is provided over the light shielding layer pattern to prevent light incident from the transparent support substrate from illuminating the channel region to suppress a photo-induced current in the channel region.

A method of fabricating a semiconductor device, comprising the steps of:

• forming a substrate having a stacked-layered structure comprised of a transparent support substrate, a light shielding layer formed on the support substrate, an insulating layer formed on the light-shielding layer, and a semiconductor single crystal layer formed on the insulating layer, wherein the step of forming the semiconductor single crystal layer includes the steps of adhering a semiconductor single crystal wafer to the insulating layer and thinning the wafer;
• selectively etching the light-shielding layer to form a light shielding layer pattern;
• and thereafter forming a transistor switching element having a channel region formed in and constituting part of the semiconductor single crystal layer and having a main gate electrode formed over and being electrically insulated from the channel region;
• wherein the channel region is provided over the light shielding layer pattern to prevent light incident from the transparent support substrate from illuminating the channel region to suppress a photo-induced current in the channel region.