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AssigneeMosel Vitelic, Inc.
InventorsLiang-Choo Hsia, Thomas Chang
Estimating the term…
An antireflection coating (116) for use in fabricating integrated circuits and electronic devices comprises a film of chromium oxide, CrO, or chromium suboxide, CrO.sub.x where x<1. An antireflection layer reduces the standing waves and topographic notching in a photoresist layer (118) when applied over a highly reflective layer (114). Highly reflective layers may be metals, such as aluminum or gold, silicides, or semiconductors, such as silicon. These coatings are preferably made by reactive sputtering of a chromium target with a partial pressure of oxygen in the sputtering chamber. The antireflection layer works primarily by absorptive, rather than wave matching, principles. This antireflection layer exhibits good adhesion and may be integrated into the device. Integrating the layer into the device may reduce stress in the underlying layers and improve device yields and reliability.
A photolithographic process for creating a pattern on a reflective layer disposed on a substrate comprising the steps of:
A photolithographic process for creating a pattern on a reflective layer disposed on a substrate comprising the steps of:
A photolithographic process of patterning a reflective layer of a semiconductor circuit comprising the steps of:
A photolithographic process of patterning a reflective layer of a semiconductor device comprising the steps of:
A photolithographic process for creating a pattern on a dielectric layer disposed on a reflective layer disposed on a substrate comprising the steps of:
Dependencies are inferred from the claim text.