Semiconductor integrated circuit device with oblique metallization lines over memory bit and word lines

A semiconductor integrated circuit device comprising:

• a semiconductor substrate;
• a memory module formed on said semiconductor substrate, said memory module comprising a plurality of memory cells each of which has a corresponding word line and bit line;
• a plurality of functional circuits formed on said semiconductor substrate;
• an over-memory wire formed on said semiconductor substrate, said over-memory wire operative for connecting two functional circuits of said plurality of functional circuits with each other;
• and
• a dummy over-memory wire formed on said semiconductor substrate, said dummy over-memory wire operative for connecting said two functional circuits of said plurality of functional circuits with each other,
• wherein:
• said over-memory wire passes over said memory module and extends obliquely across both said word lines and bit lines;
• said dummy over-memory wire extends in parallel with and next to said over-memory wire;
• and
• said dummy over-memory wire transmits a complement of a signal that is transmitted by said over-memory wire.

A semiconductor integrated circuit device comprising:

• a first semiconductor substrate;
• a second semiconductor substrate laminated to said first semiconductor substrate;
• a memory module formed on said first semiconductor substrate, said memory module comprising a plurality of memory cells each of which has a corresponding word line and bit line;
• a plurality of functional circuits formed on said second semiconductor substrate;
• and
• an over-memory wire formed on said second semiconductor substrate, said over-memory wire operative for connecting two functional circuits of said plurality of functional circuits;
• wherein said over-memory wire extends obliquely across both said word lines and said bit lines.