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US 5,670,908 AGranted
Circuit for controlling output voltage from charge pump
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsDae Hyun Kim, Yun Seob Shin
Life of this patent
Estimating the term…
Abstract
The present invention relates to a circuit for controlling output voltage from a charge pump, and more particularly to a charge pump which can reduce the chip area in a way that allows the output from the charge pump to be outputted at multi levels making use of a P-N junction breakdown voltage in the NMOS transistor.
Claims5
A voltage-generating circuit, comprising:
- a charge pump operating to output a constant voltage through an output terminal based on command signals;
- a multi level selection decoder to output a plurality of pulse signals having different phases based on the command signals;
- a first voltage control circuit to generate a first positive voltage at said output terminal based on a first pulse signal of said plurality of pulse signals;
- a second voltage control circuit to generate a second positive voltage at said output terminal based on a second pulse signal of said plurality of pulse signals;
- and
- a third voltage control circuit to generate a third positive voltage at said output terminal 1 based on third pulse signal of said plurality of pulse signals.
3 more elements
A circuit for controlling output voltage from a charge pump, comprising:
- a charge pump to output a constant voltage through the output terminal based on command signals;
- a multi level selection decoder to output a plurality of pulse signals having different phases based on the command signals;
- a first voltage control circuit to generate a first positive voltage at said output terminal according to a first pulse signal from a multi level selection decoder, wherein said first voltage control circuit comprising a first NMOS transistor having a gate electrode, a drain region, a source region, a P.sup.+ -well and a N.sup.- -well, wherein said first NMOS transistor causes a breakdown effect to occur when output voltage from said charge pump is applied to the drain region, the source region is floated, a zero volt is applied to the P.sup.+ -well, and the gate electrode is grounded, a first means for supplying a first inverse signal to the P.sup.+ -well in said first NMOS transistor, wherein said first inverse signal is generated by inversion of the first pulse signal and a second means for supplying a VCC power supply to the source electrode of said first NMOS transistor based on the first pulse signal;
- a second voltage control circuit to generate a second positive voltage at said output terminal according to a second pulse signal from said multi level selection decoder, wherein said second voltage control circuit comprising a first transistor for high voltage coupled to the output terminal of said charge pump, said first transistor operating as a diode, a second NMOS transistor causes a breakdown effect to occur when the output voltage from said charge pump is applied to the drain region, the source region is floated, a zero volt is applied to the P.sup.+ -well, and the gate electrode is grounded, a third means for supplying a second inverse signal to the P.sup.+ -well in said second NMOS transistor, wherein the second inverse signal is generated by inversion of the second pulse signal and a fourth means for supplying a VCC power supply to the source electrode of said second NMOS transistor based on the second pulse signal;
- and
- a third voltage control circuit to generate a third positive voltage as said output terminal according to a third pulse signal from said multi level selection decoder, wherein said third voltage control circuit comprising a second transistor for high voltage coupled to the output terminal of said charge pump, wherein said second transistor is operated as diode, a third transistor for high voltage coupled to said second transistor, wherein said third transistor is operated as a diode, a third NMOS transistor having a gate electrode, a drain region, a source region, a P.sup.+ -well and a N.sup.- -well, wherein said third NMOS transistor causes a breakdown effect to occur when output voltage from said charge pump is applied to the drain region, the source region is floated, a zero volt is applied to the P.sup.+ -well, and the gate electrode is grounded, a fifth means for supplying a third inverse signal to the P.sup.+ -well in said third NMOS transistor, wherein the third inverse signal is generated by inversion of the third pulse signal and a sixth means for supplying a VCC power supply to the source electrode of said third NMOS transistor based on the third pulse signal.
3 more elements
Dependencies are inferred from the claim text.