Semiconductor device with a vertical field effect transistor

A semiconductor device comprising:

• a semiconductor substrate of a first conductivity type;
• a first MOSFET of a first polarity composed of a first insular multilayered portion including, in a successively layered fashion, a first semiconductor layer doped with impurity of a first conductivity type and forming a source or a drain, a second semiconductor layer doped with impurity of a second conductivity type and forming a channel, and a third semiconductor layer doped with impurity of the first conductivity type and forming the drain or the source;
• a second MOSFET of a second polarity composed of a second insular multilayered portion including, in a successively layered fashion, a fourth semiconductor layer doped with impurity of the second conductivity type and forming a source or a drain, a fifth semiconductor layer doped with impurity of the first conductivity type and forming a channel, and a sixth semiconductor layer doped with impurity of the second conductivity type and forming the drain or the source;
• a first gate electrode formed on a side surface of said second semiconductor layer with a first gate insulating film therebetween;
• and
• a second gate electrode formed on a side surface of said fifth semiconductor layer with a second gate insulating film therebetween,
• wherein said first insular multilayered portion is formed on a semiconductor layer of the second conductivity type which is formed on said semiconductor substrate and said second insular multilayered portion is formed on said semiconductor substrate or on a semiconductor layer of the first conductivity type formed on said semiconductor substrate.