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AssigneeKabushiki Kaisha Toshiba
InventorsKazuya Nishihori, Yoshiaki Kitaura, Yoshikazu Tanabe, Tomonori Aoyama, Kyoichi Suguro, Kumi Okuwada, Shuichi Komatsu, Kazuhide Abe
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A semiconductor device in which an SiO.sub.2 film and a first wiring layer are arranged in this order on a GaAs substrate. A capacitor is formed on the first wiring layer. The capacitor includes a lower electrode which has a multi-layer structure consisting of a Ti layer, an Mo layer, and a Pt layer in this order from underside. The capacitor also includes a dielectric film made of strontium titanate. The capacitor further includes an upper electrode which has a multi-layer structure consisting of a WN.sub.x layer (120 um) and a W layer (300 nm) in this order from underside. That surface of the upper electrode, which is in contact with the dielectric film, is defined by the tungsten nitride layer.
A semiconductor device comprising a capacitor having first and second electrodes, a dielectric film comprising an oxide interposed between said electrodes, and a first contacting surface comprising tungsten nitride interposed between, and contacting, both said dielectric film and said first electrode, wherein said tungsten nitride of said first contacting surface is expressed by WN.sub.x and its coefficient x falls in a range of from 0.05 to 0.5.
Dependencies are inferred from the claim text.