Semiconductor device and method for fabricating the same
AssigneeFujitsu Limited
InventorsHiroshi Nakao, Toshihiko Mori
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Abstract
A semiconductor device includes a layer 16 of intermetallic compound layer 16 formed on a base substrate 10. The intermetallic compound is a ternary intermetallic compound 16 mixing a set amount of In with one of CoGa, NiGa, FeGa, CoAl, NiAl and FeAl . Twice of a lattice constant of the ternary intermetallic compound 16 is substantially equal to a lattice constant of a compound semiconductor forming the base substrate 10. Accordingly, the layer 16 of the intermetallic compound free from misfit dislocations can be formed on the semiconductor substrate or the semiconductor layer, and semiconductor elements can be formed on the wiring layer of the intermetallic compound layer 16.
Claims27
A semiconductor device comprising a base substrate and an intermetallic compound layer made of an intermetallic compound formed on the base substrate,
- the intermetallic compound being a ternary intermetallic compound mixing a set amount of In with one of CoGa, NiGa, FeGa, CoAl, NiAl and FeAl,
- twice of a lattice constant of the ternary intermetallic compound being substantially equal to a lattice constant of compound semiconductor forming the base substrate.
Dependencies are inferred from the claim text.