US 5,670,789 A · Semiconductor light-emitting device with quantum well structure

Abstract

A semiconductor light-emitting device that enables to realize a satisfactory carrier confinement effect to be capable of stable operation at room temperature. This device includes a QW layer and p- and n-barrier layers placed at each side of the QW layer. The QW layer has an energy level E.sub.va at the top of the valence band and an energy level E.sub.ca at the bottom of the conduction band. The p-barrier layer has an energy level E.sub.vpb at the top of the valence band and an energy level E.sub.cpb at the bottom of the conduction band. The n-barrier layer has an energy level E.sub.vnb at the top of the valence band and an energy level E.sub.cnb at the bottom of the conduction band. The energy levels E.sub.va, E.sub.vpb and E.sub.vnb at the top of the valence band satisfy the relationship of E.sub.va >E.sub.vpb >E.sub.vnb. The energy levels E.sub.ca, E.sub.cpb and E.sub.cnb at the bottom of the conduction band satisfy the relationship of E.sub.va <E.sub.vnb <E.sub.vpb. Electrons injected into the QW layer through the n-barrier layer and holes injected into the QW layer through the p-barrier layer are recombined with each other to emit light therefrom.

Claims10

Dependent claims

In a semiconductor light-emitting device including a quantum well layer and p- and n-barrier layers placed at each side of said quantum well layer;

said device comprising:
said quantum well layer having an energy level E.sub.va at the top of the valence band and an energy level E.sub.ca at the bottom of the conduction band;
said p-barrier layer having an energy level E.sub.vpb at the top of the valence band and an energy level E.sub.cpb at the bottom of the conduction band;
said n-barrier layer having an energy level E.sub.vnb at the top of the valence band and an energy level E.sub.cnb at the bottom of the conduction band;
said energy levels E.sub.va, E.sub.vpb and E.sub.vnb at the top of the valence band satisfying a relationship of E.sub.va >E.sub.vpb >E.sub.vnb ;
and
said energy levels E.sub.ca, E.sub.cpb and E.sub.cnb at the bottom of the conduction band satisfying a relationship of E.sub.ca <E.sub.cnb <E.sub.cpb ;
wherein electrons are injected into the quantum well layer through the n-barrier layer and holes are injected into the quantum well layer through the p-barrier layer;
and wherein said electrons and holes injected into said quantum well layer are recombined with each other to emit light from said active layer.

6 more elements

In a semiconductor light-emitting device having a multiple quantum well structure, said multiple quantum well structure including quantum well layers, at least one inner barrier layer placed between said adjacent quantum well layers, a p-barrier layer placed to be contact with a p-side-end one of said quantum well layers, and an n-barrier layer placed to be contact with an n-side-end one of said quantum well layers;

said device comprising:
each of said quantum well layers having an energy level E.sub.va at the top of the valence band and an energy level E.sub.ca at the bottom of the conduction band;
said p-barrier layer having an energy level E.sub.vpb at the top of the valence band and an energy level E.sub.cpb at the bottom of the conduction band;
said n-barrier layer having an energy level E.sub.vnb at the top of the valence band and an energy level E.sub.cnb at the bottom of the conduction band;
said at least one inner barrier layer having an energy level E.sub.vib at the top of the valence band and an energy level E.sub.cib at the bottom of the conduction band;
said energy levels E.sub.va, E.sub.vpb, E.sub.vnb and E.sub.vib at the top of the valence band satisfying relationships of E.sub.va >E.sub.vpb >E.sub.vnb and E.sub.va >E.sub.vib ;
said energy levels E.sub.ca, E.sub.cpb, E.sub.cnb and E.sub.cib at the bottom of the conduction band satisfying relationships of E.sub.ca <E.sub.cnb <and E.sub.ca <E.sub.cib ;
wherein electrons are injected into said n-side-end one of said quantum well layers through said n-barrier layer and said injected electrons are further injected into said remaining quantum well layers;
and wherein holes are injected into said p-side-end one of said quantum well layers through said p-barrier layer and said injected holes are further injected into said remaining quantum well layers;
and wherein said electrons and holes injected into said respective quantum well layers are recombined with each other to emit light from said quantum well layers.

7 more elements

Dependencies are inferred from the claim text.

Semiconductor light-emitting device with quantum well structure

Life of this patent

Semiconductor light-emitting device with quantum well structure

Life of this patent

Abstract

Claims10