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US 5,670,420 AGranted
Method of forming metal interconnection layer of semiconductor device
AssigneeHyundai Electronics Industries Co., Ltd.
InventorKyeong Keun Choi
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Abstract
A method of forming a metal interconnection layer of a semiconductor device is disclosed as forming a barrier metal for preventing an atomic migration between a metal film for an interconnection and a lower conduction layer being contacted with the metal film by an ion implantation, so that it prevents metal atoms diffusing into a Si substrate in a deep and narrow contact hole and it makes a copper film to be deposited on an oxide with ease, thereby carrying out an excellent metallization process.
Claims8
A method for forming a metal interconnection of a semiconductor device, comprising the steps of:
- providing an insulating film having an opening exposing a conducting film;
- implanting refractory metal ions into the insulating film and the conducting film, wherein the refractory metal ions form a first refractory metal film on the insulating film and the conducting film;
- forming a metal wiring layer by a chemical vapor deposition method on the resulting structure for a metal interconnection;
- implanting refractory metal ions into the metal wiring layer so that a second refractory metal film is formed on the resulting structure for preventing changes in physical properties of the metal wiring layer;
- patterning the first refractory metal film, the metal wiring layer and the second refractory metal film, using a metal interconnection mask;
- and
- forming a third refractory metal film on the sidewall of the patterned metal wiring by a selective deposition method.
4 more elements
Dependencies are inferred from the claim text.