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US 5,670,407 AGranted
Method of fabricating a toothed-shape capacitor node in a semiconductor DRAM circuit
AssigneeVanguard International Semiconductor Corporation
InventorHorng-Huei Tseng
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Abstract
The present invention is a method of fabricating a toothed-shape capacitor node in a semiconductor DRAM circuit. This invention utilizes dot silicon as an etching mask. Next, the polysilicon is oxidized and removed to form trenches in the bottom storage of the capacitor. Thus, a toothed-shape capacitor node is formed in semiconductor circuit.
Claims17
A method for forming a toothed-shaped capacitor node on a semiconductor substrate, said method comprising:
- forming a polysilicon layer over said semiconductor substrate;
- forming a dielectric layer on said polysilicon layer;
- forming dot silicon on said dielectric layer;
- removing said dielectric layer left uncovered by said dot polysilicon;
- oxidizing said dot silicon and said polysilicon layer uncovered by said second dielectric layer to form a poly-oxide layer;
- removing said poly-oxide layer to form trenches in said polysilicon layer;
- removing said dielectric layer;
- and
- patterning and etching said polysilicon layer to form a capacitor node.
6 more elements
A method for forming toothed-shaped capacitor node on a semiconductor substrate, said method comprising the steps of:
- forming a polysilicon layer over said semiconductor substrate;
- forming a dielectric layer on said polysilicon layer;
- forming dot silicon on said dielectric layer;
- etching said dielectric layer left uncovered by said dot silicon until the polysilicon layer is reached;
- oxidizing said polysilicon layer uncovered by said dielectric layer to form a poly-oxide layer;
- removing said poly-oxide layer to form trenches in said polysilicon layer;
- removing said dielectric layer;
- and
- patterning and etching said polysilicon layer to form a capacitor node.
6 more elements
Dependencies are inferred from the claim text.