Method of making a tooth shaped capacitor
AssigneeVanguard International Semiconductor Corporation
InventorHorng-Huei Tseng
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Abstract
A method of manufacturing a capacitor for use in semiconductor memories is disclosed herein. The present invention includes forming anti-oxidizing regions from dot silicon for use as an oxidation mask to oxidize a polysilicon layer. Further, a silicon oxide layer is used as an etching mask to form a bottom storage node of a capacitor. An etching process is performed to etch a portion of the first polysilicon layer. Next, the silicon oxide layer is removed to define the bottom storage node. Utilizing the bottom storage node structure, the present invention can be used to increase the surface area of the capacitor.
Claims16
A method for manufacturing a capacitor on a semiconductor substrate, said method comprising the steps of:
- forming a first conductive layer over said substrate;
- forming a dot silicon layer on said first conductive layer;
- doping nitrogen into said dot silicon layer using an oblique angle to form anti-oxidation regions;
- oxidizing said first conductive layer using said anti-oxidation regions as a mask to form a silicon oxide layer on said first conductive layer;
- removing said anti-oxidation regions and a portion of said first conductive layer using said silicon oxide layer a mask;
- patterning and etching said first conductive layer to form a first storage node of said capacitor;
- forming a dielectric layer on the surface of said first storage node of said capacitor;
- and
- forming a second conductive layer over said dielectric layer to act as a second storage node of said capacitor.
A method of forming a silicon structure, said method comprising the steps of:
- forming a silicon layer over a semiconductor substrate;
- forming a dot silicon layer on said first conductive layer;
- doping nitrogen into said dot silicon layer at an oblique angle to form anti-oxidation regions;
- performing a thermal oxidation to said silicon layer in an oxygen ambient using said anti-oxidation regions as a mask to form a silicon oxide layer on said silicon layer;
- removing said anti-oxidation regions and a portion of said silicon layer using said silicon oxide layer as a mask;
- removing said silicon oxide layer on said silicon layer;
- and
- patterning and etching said silicon layer to form said silicon structure.
A method for manufacturing a capacitor on a semiconductor substrate, said method comprising the steps of:
- forming a first polysilicon layer over said substrate;
- forming a HSG-Si layer on said first polysilicon layer;
- doping nitrogen into said HSG-Si layer at an oblique angle to form anti-oxidation regions;
- oxidizing said first polysilicon layer using said anti-oxidation regions as a mask to form a silicon oxide layer on said first polysilicon layer;
- removing said anti-oxidation regions and a portion of said first polysilicon layer using said silicon oxide layer as a mask;
- removing said silicon oxide layer;
- patterning and etching said first polysilicon layer to form a first electrode of said capacitor;
- forming a dielectric layer on the surface of said first electrode of said capacitor;
- and
- forming a second polysilicon layer over said dielectric layer to act as a second electrode of said capacitor.
Dependencies are inferred from the claim text.