Process for forming semiconductor-on-insulator device
AssigneeMotorola, Inc.
InventorShih-Wei Sun
Life of this patent
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Abstract
Interconnects (22 and 32) are formed within an insulating base material of a first substrate. Trenches (54) and portions of an insulating layer (52) are formed within a second substrate (50). The two substrates are bonded by fusion. The second substrate is polished back to form semiconductor islands (81-83) over the first substrate. Active regions of transistors are formed within the islands (81-83). Conductive plugs (131-134) are made between portions of the active regions and interconnects (22, 32, and 141) that underlie or overlie the semiconductor islands (81-83). Embodiments of the present invention allow higher component density, better thickness control for SOI regions, and lower leakage current compared to SOI layers that use LOCOS-type field isolation.
Claims24
A process for forming a semiconductor-on-insulator device comprising the steps of:
- providing a first substrate including a first insulating layer;
- forming a first interconnect over the first insulating layer;
- forming trenches within a second substrate having a first thickness and having a first conductivity type;
- forming a second insulating layer within the trenches;
- bonding the first and second substrates together such that the first and second insulating layers are adjacent to each other, wherein this step is performed after the step of forming the first interconnect;
- and
- removing a portion of the second substrate to expose portions of the second insulating layer thereby forming semiconductor islands.
A process for forming a semiconductor-on-insulator device comprising the steps of:
- providing a first substrate including a first insulating layer;
- forming first interconnects over the first insulating layer;
- forming a second insulating layer over the first interconnects;
- forming second interconnects over the second insulating layer;
- forming a third insulating layer over the second interconnects;
- forming trenches within a second substrate having a first conductivity type;
- forming a fourth insulating layer within the trenches;
- bonding the first and second substrates together such that the third and fourth insulating layers are adjacent to each other;
- removing a portion of the second substrate to expose portions of the fourth insulating layer thereby forming semiconductor islands;
- forming active regions of transistors within the semiconductor islands;
- and
- forming electrical connections between the active regions and the first and second interconnects.
A process for forming a semiconductor-on-insulator device comprising the steps of:
- providing a first substrate including a first insulating layer;
- forming first interconnects over the first insulating layer;
- forming trenches within a second substrate having a first conductivity type;
- forming a second insulating layer within the trenches;
- bonding the first and second substrates together such that the first and second insulating layers are adjacent to each other;
- wherein this step is performed after the step of forming the first interconnects;
- removing a portion of the second substrate to expose portions of the second insulating layer thereby forming semiconductor islands;
- forming active regions of transistors within the semiconductor islands;
- forming a third insulating layer over the active regions;
- and
- forming second interconnects,
- wherein portions of the active regions are electrically connected to interconnects selected from a group consisting of the first and second interconnects.
A process for forming a semiconductor-on-insulator device comprising the steps of:
- providing a first substrate including a first insulating layer;
- forming a first interconnect over the first insulating layer;
- forming a second insulating layer over the first interconnect;
- forming a second interconnect over the second insulating layer;
- forming a third insulating layer over the second interconnect;
- forming trenches within a second substrate having a first conductivity type;
- forming a fourth insulating layer within the trenches;
- bonding the first and second substrates together such that the third and fourth insulating layers are adjacent to each other;
- removing a portion of the second substrate to expose portions of the fourth insulating layer thereby forming semiconductor islands;
- forming a first doped region and a second doped region within at least one of the semiconductor islands;
- and
- forming a first electrical connection and a second electrical connection, wherein:
- the first electrical connection is between the first doped region and an interconnect selected from a group consisting of the first and second interconnects;
- and
- the second electrical connection is between the second doped region, the first interconnect, and the second interconnect.
A process for forming a semiconductor-on-insulator device comprising the steps of:
- providing a first substrate including a first insulating layer;
- forming first interconnects over the first insulating layer;
- forming a second insulating layer over the first interconnects;
- forming second interconnects over the second insulating layer;
- forming a third insulating layer over the second interconnects;
- forming trenches within a second substrate having a first conductivity type;
- forming a fourth insulating layer within the trenches;
- bonding the first and second substrates together such that the third and fourth insulating layers are adjacent to each other;
- removing a portion of the second substrate to expose portions of the fourth insulating layer thereby forming semiconductor islands;
- forming active regions of transistors within the semiconductor islands;
- forming a fifth insulating layer over the active regions;
- and
- forming third interconnects,
- wherein:
- portions of the active regions are electrically connected to interconnects selected from a group consisting of the first and third interconnects;
- at least one of the third interconnects is electrically connected to at least one of the first interconnects;
- and
- at least one of the third interconnects is electrically connected to at least one of the second interconnects.
Dependencies are inferred from the claim text.