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US 5,670,298 AGranted
Method of forming a metal pattern in manufacturing a semiconductor device
AssigneeLG Semicon Co., Ltd.
InventorHoon Hur
Life of this patent
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Abstract
A method a metal pattern on a substrate. The method comprises the steps of forming a metal film on the substrate, forming a porous film on the metal film, forming a photoresist pattern on the porous film, and etching the metal film and the porous film using the photoresist pattern as a mask to thereby form the metal pattern. During the step of forming the photoresist pattern on the porous film, the porous film causes the scattering of light incident on the porous film to thereby cause a mutual interference of the light.
Claims6
A method of forming a metal pattern on a substrate, comprising the steps of:
- forming a metal film on the substrate;
- forming a porous film on the metal film;
- forming a photoresist pattern on the porous film;
- and
- etching the metal film and the porous film using the photoresist pattern as a mask to thereby form the metal pattern,
- wherein during the step of forming the photoresist pattern on the porous film, the porous film causes the scattering of light incident on the porous film to thereby cause a mutual interference of the light.
3 more elements
Dependencies are inferred from the claim text.