Method for forming ferroelectric thin film and apparatus therefor

A method for forming a ferroelectric thin film on a wafer, comprising the steps of:

• inducing ferroelectric reactant materials consisting of plural elements into dissociation by exciting plasma with RF power;
• setting an optimal process condition in which the ions dissociated from said reactant materials by the excited plasma are subjected to deposition at high temperatures under low pressures;
• combining an amine ligand with said reactant materials and supplying the combined reactant materials through conduits, a manifold and a shower head to a reactor at a high temperature under a low vapor pressure without deterioration, said manifold collecting said reactant materials, said shower head serving to spray the mixed reactant materials;
• controlling the temperatures of said conduits, said manifold and said shower head;
• and
• depositing a ferroelectric thin film on the wafer in said reactor while purging residual gas from the conduits.

An apparatus for forming a ferroelectric thin film, comprising:

• a chamber body defining a depositing space;
• a manifold provided over the chamber body for collecting reactant materials;
• a shower head means for converting the reactant materials of the manifold into a gaseous state and for spraying the reactant materials in the gaseous state on a wafer;
• a baffle guide means surrounding the shower head, the wafer and a heating block, for preventing the gas sprayed from the shower head from expanding widely and from leaking directly into a vacuum port;
• and
• a plate for RF electrode provided over the wafer and for forming plasma.