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US 5,668,762 AGranted
Semiconductor memory device allowing reduction of power consumed in a shared sense amplifier type sense amplifier
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorMakoto Suwa
Life of this patent
Estimating the term…
Abstract
A semiconductor memory device 251 has a sense amplifier 7 of shared sense amplifier type. A switching signal generating circuit 253 is provided for application of control signals .phi..sub.1 and .phi..sub.2 to a control electrode of a connection transistor of sense amplifier 7. Switching signal generating circuit 253 applies control signals .phi..sub.1 and .phi..sub.2 which is boosted only for a prescribed time period after the rise of external /RAS signal to the control electrode of the connection transistor of sense amplifier 7. Therefore, as compared with the operation in which control signals .phi..sub.1 and .phi..sub.2 which are constantly boosted are applied, power consumption can be reduced.
Claims11
A semiconductor memory device, comprising:
- a first bit line pair to one of which bit lines a memory cell is connected;
- a second bit line pair to one of which bit lines a memory cell is connected;
- a sense amplifier for amplifying potential of said first bit line pair or said second bit line pair;
- control signal generating means, responsive to an active state of a control signal, for generating a first control signal or a second control signal which is at a potential level, higher than a power supply potential level, for a prescribed time period after the control signal changes from the active state to an inactive state;
- a first connection transistor for connecting said first bit line pair to said sense amplifier in response to application of the first control signal generated by said control signal generating means to its control electrode;
- and
- a second connection transistor for connecting said second bit line pair and said sense amplifier in response to application of the second control signal generated by said control signal generating means to its control electrode.
4 more elements
A semiconductor memory device, comprising:
- a first bit line pair to one of which bit lines a memory cell is connected;
- a second bit line pair to one of which bit lines a memory cell is connected;
- a sense amplifier for amplifying potential of said first bit line pair or said second bit line pair;
- control signal generating means for generating a first control signal or a second control signal which is at a boosted potential level for a prescribed time period higher than a power supply potential level;
- a first connection transistor for connecting said first bit line pair to said sense amplifier in response to application of the first control signal generated by said control signal generating means to its control electrode;
- and
- a second connection transistor for connecting said second bit line pair and said sense amplifier in response to application of the second control signal generated by said control signal generating means to its control electrode, wherein
- said control signal generating means includes
- delay means receiving a prescribed signal for delaing the received signal for a prescribed time period;
- and
- boosting means for generating a boosting signal based on said received signal for generating the first control signal or the second control signal of the boosted potential level, corresponding to the prescribed time period by which the prescribed signal is delayed by said delay means.
8 more elements
A semiconductor memory device, comprising:
- a first bit line pair to one of which bit lines a memory cell is connected;
- a second bit line pair to one of which bit lines a memory cell is connected;
- a sense amplifier for amplifying potential of said first bit line pair or said second bit line pair;
- control signal generating means for generating a first control signal or a second control signal which is at a boosted potential level for a prescribed time period higher than a power supply potential level;
- a first connection transistor for connecting said first bit line pair to said sense amplifier in response to application of the a first control signal generated by said control signal generating means to its control electrode;
- and
- a second connection transistor for connecting said second bit line pair and said sense amplifier in response to application of the second control signal generated by said control signal generating means to its control electrode, wherein
- said control signal generating means includes a switching signal generating circuit for generating said first control signal for turning on or off said first connection transistor or for generating said second control signal for turning on or off said second connection transistor.
5 more elements
A semiconductor memory device comprising:
- a first bit line pair to one of which bit lines a memory cell is connected;
- a second bit line pair to one of which bit lines a memory cell is connected;
- a sense amplifier for amplifying potential of said first bit line pair or said second bit line pair;
- control signal generating means for generating a first control signal or a second control signal which is at a boosted potential level for a prescribed time period higher than a power supply potential level;
- a first connection transistor for connecting said first bit line pair to said sense amplifier in response to application of the first control signal generated by said control signal generating means to its control electrode;
- a second connection transistor for connecting said second bit line pair and said sense amplifier in response to application of the second control signal generated by said control signal generating means to its control electrode;
- and
- input means receiving an external control signal wherein
- said control signal generating means generates, in normal operation, the first control signal to be applied to said first connection transistor or the second control signal to be applied to said second connection transistor of the boosted potential level only for the prescribed time period, in response to trailing edge of level change of the external control signal input through said input means.
6 more elements
A semiconductor memory device comprising:
- a first bit line pair to one of which bit lines a memory cell is connected;
- a second bit line pair to one of which bit lines a memory cell is connected;
- a sense amplifier for amplifying potential of said first bit line pair or said second bit line pair;
- control signal generating means for generating a first control signal or a second control signal which is at a boosted potential level for a prescribed time period higher than a power supply potential level;
- a first connection transistor for connecting said first bit line pair to said sense amplifier in response to application of the first control signal generated by said control signal generating means to its control electrode;
- a second connection transistor for connecting said second bit line pair and said sense amplifier in response to application of the second control signal generated by said control signal generating means to its control electrode;
- input means receiving an external control signal;
- self refresh signal generating means for generating a self refresh signal for self refreshing data of a memory cell connected to one of the bit lines of said first bit line pair or the memory cell connected to one of the bit lines of said second bit line pair, based on the external control signal input through said input means;
- and
- internal control signal generating means for generating an internal control signal based on the self refresh signal generated from said self refresh signal generating means;
- wherein
- said control signal generating means generates, in self refresh operation, the first control signal to be applied to said first connection transistor or the second control signal to be applied to said second connection transistor of boosted potential level only for the prescribed period, in response to trailing edge of level change of the internal control signal generated by said internal control signal generating means.
9 more elements
A semiconductor memory device, comprising:
- a first bit line pair to one of which bit lines a memory cell is connected;
- a second bit line pair to one of which bit lines a memory cell is connected;
- a sense amplifier for amplifying potential of said first bit line pair or said second bit line pair;
- control signal generating means for generating a first control signal or a second control signal;
- a first connection transistor for connecting said first bit line pair to said sense amplifier in response to application of the first control signal generated by said control signal generating means to its control electrode;
- a second connection transistor for connecting said second bit line pair to said sense amplifier in response to application of the second control signal generated by said control signal generating means to its control electrode;
- input means receiving an external control signal;
- self refresh signal generating means for generating a self refresh signal for self refresh of data in the memory cell connected to one of the bit lines of said first bit line pair or of the memory cell connected to one of the bit lines of said second bit line pair based on the external control signal input through said input means;
- and
- internal control signal generating means for generating an internal control signal based on the self refresh signal generated by said self refresh signal generating means;
- wherein
- said control signal generating means includes first generating means for generating, in normal operation, a third control signal which is at a boosted power potential level, higher than power supply potential level, as the first control signal to be applied to said first connection transistor or a fourth control signal which is at the boosted potential level as the second control signal to be applied to said second connection transistor, and
- second generating means for generating, in self refresh operation, a fifth control signal which is at the boosted potential level only for a prescribed time period as the first control signal to be applied to said first connection transistor or a sixth control signal which is at the boosted potential level only for a prescribed time period as the second control signal to be applied to said second connection transistor, in response to trailing edge of level change in the internal control signal generated by said internal control signal generating means.
10 more elements
Dependencies are inferred from the claim text.