Decoded wordline driver with positive and negative voltage modes
AssigneeMacronix Int'l Co., Ltd.
InventorsTom Dang-Hsing Yiu, Chun-Hsiung Hung, Ray-Lin Wan, Yao-Wu Cheng, Teruhiko Kamei
Life of this patent
Estimating the term…
Loading patent…
AssigneeMacronix Int'l Co., Ltd.
InventorsTom Dang-Hsing Yiu, Chun-Hsiung Hung, Ray-Lin Wan, Yao-Wu Cheng, Teruhiko Kamei
Estimating the term…
Wordline driver circuitry drives a plurality of wordlines in a flash EEPROM memory array in a first mode which selects between a positive voltage and ground, and a second mode which selects between a negative voltage and ground. A first supply voltage selector supplies positive voltage during the first mode, and a second mode reference voltage, such as ground, in the second mode. A second supply voltage selector supplies the first mode reference voltage such as ground in the first mode, and the negative voltage during a second mode. An inverting driver has an input which receives a wordline select signal, and an output coupled to the wordline, a first supply voltage input connected to the first supply voltage selector, and second supply voltage input connected to the second supply voltage selector. The inverting driver couples the first supply voltage input to the wordline when the wordline select signal is in a low state, and couples the second supply voltage input to the wordline when the wordline select signal is in a high state. A second inverter is connected in feedback across the inverting driver to hold the input of the inverting driver at the value of the wordline select signal during the negative voltage decode. The wordline select signals come from an address decoder. An isolation circuit is provided between the address decoder and the input to the inverting driver to isolate the decoder from the negative voltages which appear on the output of the second inverter during the negative voltage decoding state.
An apparatus for driving a plurality of wordlines in a memory array, comprising:
An apparatus for driving a plurality of wordlines in a memory array, comprising:
An apparatus for driving a plurality of wordlines in a memory array, comprising:
In a memory array including a plurality of wordlines, an apparatus responsive to an address to drive a particular wordline in the plurality of wordlines corresponding to the address with a positive voltage in a first mode and with a negative voltage in a second mode, the apparatus comprising:
In a memory array including a plurality of wordlines, an apparatus responsive to an address to drive a particular wordline in the plurality of wordlines corresponding to the address with a positive voltage in a first mode and with a negative voltage in a second mode, the apparatus comprising:
In a memory array including a plurality of wordlines, an apparatus responsive to an address to drive a particular wordline in the plurality of wordlines corresponding to the address with a positive voltage in a first mode and with a negative voltage in a second mode, the apparatus comprising:
In a flash EEPROM memory array including a plurality of wordlines, an apparatus responsive to an address to drive a particular wordline in the plurality of wordlines corresponding to the address with a positive voltage in a read mode and with a negative voltage in a program mode, the apparatus comprising:
In a flash EEPROM memory array including a plurality of wordlines, an apparatus responsive to an address to drive a particular wordline in the plurality of wordlines corresponding to the address with a positive voltage in a read mode and with a negative voltage in a program mode, the apparatus comprising:
In a flash EEPROM memory array including a plurality of wordlines, an apparatus responsive to an address to drive a particular wordline in the plurality of wordlines corresponding to the address with a positive voltage in a read mode and with a negative voltage in a program mode the apparatus comprising:
Dependencies are inferred from the claim text.