Capacitor of a semiconductor device
AssigneeHyundai Electronics Industries Co., Ltd.
InventorDae Young Kim
Life of this patent
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Abstract
A semiconductor device wherein an effective surface area is secured within a contact hole and wherein a storage electrode with rectangular corners is exactly patterned. The effective surface area within a contact hole can be obtained by overlapping the storage electrode contact hole with a portion of the storage electrode, so as to ensure more capacitance. Rounding of the corner of the rectangular storage electrode, which directs the resulting storage electrode to diminish in effective surface area, can be prevented by the different position of the storage electrode mask at the contact hole from one row or column to next, so as to make no difference between the patterned storage electrode and the designed one.
Claims5
A semiconductor storage device for use with a second semiconductor device in a semiconductor substrate, comprising:
- a lower insulating layer formed on the substrate with contact holes exposing selected portions of the substrate;
- and
- a plurality of storage electrodes, each comprising a conductive layer pattern and a conductive spacer, said conductive layer pattern partially overlapping a corresponding contact hole, wherein said conductive spacer is formed at a side wall of the conductive layer pattern within said contact hole, but not in contact with a side wall of said contact hole, and extends over the conductive layer pattern.
Dependencies are inferred from the claim text.