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US 5,668,405 AGranted
Semiconductor device with a film carrier tape
AssigneeNEC Corporation
InventorChikara Yamashita
Life of this patent
Estimating the term…
Abstract
Disclosed is a semiconductor device which has a semiconductor IC chip, a base film forming a basis of a film carrier tape, through-holes and device holes which open in the base film, a copper-foil wiring formed on the base film, inner leads formed at the inside end of the copper-foil wiring, lands for connecting to outside, apertures formed in the center of the respective lands, cover resist formed on the base film except the lands, sealing resin for protecting the semiconductor IC chip and solder bumps.
Claims8
A semiconductor device, comprising:
- a film carrier tape comprising a base film in which a device hole and through-hole are formed and a metal-foil wiring layer formed on said base film, wherein said metal-foil writing layer includes one coplanar end extending into said device hole to form an inner lead and the other coplanar end extending onto said through-hole to form a land;
- a semiconductor integrated circuit chip which is provided with an electrode which is connected with said inner lead of said metal-foil wiring layer;
- sealing resin for protecting said semiconductor integrated circuit chip;
- and
- a bump which is formed on said land and is formed on a front or back surface of said base film, said bump being made of a conductor material;
- wherein an aperture with dimensions smaller than said through-hole is formed in the center of said land of said metal-foil wiring layer, whereby the material of the bump contacts both the front and back surfaces of the land.
3 more elements
A semiconductor device, comprising:
- a film carrier tape comprising a base film in which a device hole and a through-hole are formed and a metal-foil wiring layer formed on said base film, wherein said metal-foil wiring layer includes one end extending into said device hole to form an inner lead and the other end extending onto said through-hole to form a land having front and back surfaces;
- a semiconductor integrated circuit chip which is provided with an electrode which is connected with said inner lead of said metal-foil wiring layer;
- a bump which is formed on said land and is formed on a front or back surface of said base film, said bump being made of a conductive material;
- the land in the region of the through-hole having a dimension smaller than said through-hole whereby the material of the bump contacts both the front and back surfaces of the land.
1 more element
Dependencies are inferred from the claim text.