Composition for InSB and GaAs thin film on silicon substrate for use in photodetectors
AssigneeNorthwestern University
InventorManijeh Razeghi
Life of this patent
Estimating the term…
Abstract
An intermetallic compound semiconductor thin film comprises thin film made of either InSb or GaAs heterostructure on a silicon substrate. Preferably, the thin film is grown by a Molecular Beam Epitaxy method.
Claims6
A composite film for use in photodetectors, said film comprising sequential layers of InSb, said sequential layers being a first doped InSb layer adjacent and abutting a silicon substrate, an undoped InSb layer adjacent and abutting said first doped InSb layer and a second doped InSb layer adjacent and abutting said undoped InSb layer.
A composite film for use in photodetectors, said film comprising sequential layers of InSb, said sequential layers being a first doped InSb layer adjacent and abutting a silicon substrate with no intermediate material between said first InSb layer and said substrate, an undoped InSb layer adjacent and abutting said first doped InSb layer and a second doped InSb layer adjacent and abutting said undoped InSb layer.
Dependencies are inferred from the claim text.