Method of manufacturing semiconductor device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsJunko Matsumoto, Shigenori Sakamori
Life of this patent
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Abstract
According to this invention, an etching stopper film constituted by a silicon nitride film is stacked on an insulating film constituted by a silicon oxide film for protecting a wiring to prevent damage to the wiring caused by anisotropic dry etching for forming a contact hole. A resist pattern having the same shape as that of the contact hole is formed by using a reflection prevention film containing nitrogen atoms, the etching stopper film and the reflection prevention film in a contact hole formation region which contain nitrogen atoms and have equal selectivity ratios under a predetermined condition are simultaneously removed by etching, so that a semiconductor device having stable performance and simple manufacturing steps can be obtained.
Claims8
A method of manufacturing a semiconductor device comprising the steps of:
- forming a wiring on one major surface of a semiconductor substrate;
- forming an insulating film covering the upper and side surfaces of said wiring;
- forming an etching stopper film on the entire surface of said semiconductor substrate;
- forming an insulating interlayer on said etching stopper film;
- forming a reflection prevention film on said insulating interlayer;
- forming a resist pattern having a pattern having the same shape as that of a contact hole on said reflection prevention film;
- removing said reflection prevention film and said insulating interlayer located on a contact formation region by using said resist pattern as an etching mask;
- removing said resist pattern and simultaneously removing said reflection prevention film and said etching stopper film on the contact formation region by etching to form a contact hole;
- and
- exposing one major surface of said semiconductor substrate of the contact hole formation region and burying a conductive material in said contact hole to form a contact.
Dependencies are inferred from the claim text.