Method for forming isolated regions in a semiconductor device
AssigneeHyundai Electronics Industries Co., Ltd.
InventorSang Hoon Park
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Abstract
The present invention provides a method for forming a field oxide layer without the use of the LOCOS process. Accordingly, the present invention provides a superior effect capable of increasing the active region and improving the integration of semiconductor devices, preventing the bird's beak from being generated. Also, in the present invention, since the width of the field oxide layer is the same as that of a spacer on the sidewall of the insulating layer, the area of the field oxide layer is minimized.
Claims16
A method for isolating a semiconductor device, comprising the steps of:
- forming a first insulating layer exposing a field region of a substrate;
- forming a transition metal spacer on said substrate and on the sidewall of said first insulating layer;
- forming a second insulating layer on the entire resultant structure;
- diffusing ions of said transition metal spacer into said substrate by thermally treating said substrate;
- polishing said second insulating layer until said transition metal spacer is exposed, a portion thereof remaining not to be removed;
- forming a trench in said substrate by removing said transition metal spacer and ion-diffused substrate under said transition metal spacer;
- forming a third insulating layer on the entire resultant structure, filling up the said trench;
- forming a photoresist pattern on said third insulating layer and on said field region;
- etching said third insulating layer using said photoresist pattern as an etching barrier;
- exposing a portion of said substrate by removing said. photoresist pattern and said first insulating layer;
- and
- forming epitaxial layers on said exposed substrate as active regions.
A method for isolating a semiconductor device, comprising the steps of:
- forming a first insulating layer exposing a portion of a substrate;
- forming a transition metal spacer on said substrate and on the sidewall of said first insulating layer;
- forming a second insulating layer on the entire resultant structure;
- diffusing ions of said transition metal spacer into said substrate by thermally treating said substrate;
- polishing said second insulating layer such that said transition metal spacer is exposed, a portion thereof remaining not to be removed;
- forming a trench in said substrate by removing said transition metal spacer and ion-diffused substrate under said transition metal spacer;
- forming a third insulating layer on the entire resultant structure, filling up the said trench;
- polishing the stacked layers until said transition metal spacer is overall exposed, performing the planarization process;
- exposing a portion of said substrate by removing said second insulating layer and said first insulating layer, which remain not to be removed, such that said substrate is exposed;
- and
- forming epitaxial layers on said exposed substrate as active regions.
Dependencies are inferred from the claim text.