Method of manufacturing a semiconductor device having a capacitor
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsTomonori Okudaira, Takeharu Kuroiwa, Nobuo Fujiwara, Keiichiro Kashihara
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Abstract
According to a semiconductor device and a method of manufacturing thereof, a sidewall spacer is formed at a sidewall of a contact hole, in a recess portion defined by the sidewall of the contact hole and a buried conductive layer, having a film thickness gradually increasing from a top face corner of an interlayer insulation film to the surface of the buried conductive layer. Therefore, a semiconductor device that can achieve favorable breakdown voltage and anti-leak characteristics between a lower electrode layer and an upper electrode layer forming a capacitor of a DRAM.
Claims1
A method of manufacturing a semiconductor device comprising the steps of:
- forming an impurity region on a main surface of semiconductor substrate,
- forming an interlayer insulation film on the main surface of said semiconductor substrate to cover said impurity region, including a first contact hole of a first diameter and reaching said impurity region, and a second contact hole of a second diameter greater than said first diameter and provided above said first contact hole in communication therewith,
- forming a buried conductive layer filling said first contact hole, and in contact with a part of the top face of said impurity region,
- forming a lower electrode layer, filling said second contact hole, in contact with the surface of said buried conductive layer, and having a top face substantially flush with a top face of said interlayer insulation film,
- forming a high dielectric film of a high dielectric constant material on said interlayer insulation film to come into contact with said lower electrode, and
- forming an upper electrode on said high dielectric film.
Dependencies are inferred from the claim text.