Method of forming a resistor and integrated circuitry having a resistor construction

A method of forming a resistor within a semiconductive substrate from semiconductive material comprising the following steps:

• doping a first region of the semiconductive substrate with a conductivity enhancing impurity of a first type and to a first electrically resistive dopant concentration;
• forming a spaced pair of second diffusion regions of conductivity enhancing impurity of the first type within the semiconductive substrate to a second electrically conductive dopant concentration, the spaced second diffusion regions contacting the first region and having first region semiconductive material extending therebetween;
• forming a transistor gate in a second region of the semiconductive substrate, the gate being encapsulated by an insulative material;
• after forming the second diffusion regions and transistor gate, forming an insulating layer outwardly of the semiconductive substrate and over both the first region and the transistor gate;
• forming a pair of first openings into the insulating layer to the semiconductive substrate, the respective first openings overlying the pair of second diffusion regions, the forming of the pair of first openings also comprising in the same step etching a pair of second openings through the insulating layer to the semiconductive substrate immediately adjacent the transistor gate in a manner substantially selective relative to the encapsulating insulative material, the etching exposing the substrate while etching the insulating layer selectively relative to the encapsulating insulative material, wherein a portion of said insulating layer covers all of the transistor gate after said etch;
• and
• forming electrically conductive material within the pair of first openings.