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AssigneeNippondenso Co., Ltd.
InventorsFumio Ohara, Shinji Yoshihara, Katuhiko Kanamori, Takashi Kurahashi
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On a silicon wafer there is formed a movable gate MOS transistor (sensing element: functional element). A bonding frame consisting of a silicon thin film is patterned around an element formation region on the surface of the silicon wafer. On a cap forming silicon wafer there is projectively provided a leg portion on the bottom surface of which a bonding layer consisting of a gold film is formed. The cap forming silicon wafer is disposed on the silicon wafer, whereupon heating with respect thereto is performed at a temperature equal to higher than a gold/silicon eutectic temperature to thereby make bondage between the bonding frame of the silicon wafer and the bonding layer of the cap forming silicon wafer. Thereafter, the both wafers are diced in chip units.
A method for manufacturing a semiconductor device including a semiconductor wafer having a functional element formed on a surface thereof and a cap covering the functional element with a spatial portion being provided with respect to this functional element on the surface of the semiconductor wafer, comprising:
A method for manufacturing a semiconductor device including a semiconductor wafer having a functional element formed on a surface thereof and a cap covering the functional element with a spatial portion being provided with respect to this functional element on the surface of the semiconductor wafer, comprising:
A method for manufacturing a semiconductor device including a semiconductor wafer having a functional element formed on a surface thereof and a cap covering the functional element with a spatial portion being provided with respect to this functional element on the surface of the semiconductor wafer, comprising:
Dependencies are inferred from the claim text.