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US 5,668,028 AGranted
Method of depositing thin nitride layer on gate oxide dielectric
AssigneeSGS-Thomson Microelectronics S.A.
InventorFrank Randolph Bryant
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Abstract
A gate structure in a transistor and method for fabricating the structure. A gate structure is formed on a substrate. The gate structure includes three layers: an oxide layer, a nitride layer and a polysilicon layer. The oxide layer is located on the substrate, the nitride layer is located on the oxide layer, and the polysilicon layer is located on the nitride layer. The gate structure is reoxidized to form a layer of oxide over the gate structure.
Claims8
A method for fabricating a portion of a semiconductor device comprising:
- forming a gate oxide layer on and in contact with a surface of a substrate, wherein the gate oxide layer is less than 200 .ANG. thick;
- forming a nitride layer on the oxide gate layer;
- forming a polysilicon layer on the nitride layer;
- etching away the polysilicon and nitride layers in areas to form a gate structure;
- and
- reoxidizing the gate structure to form a layer of oxide,
- wherein a formation of asperities on an underside of the polysilicon layer is prevented.
4 more elements
Dependencies are inferred from the claim text.