Method for defining a region on a wall of a semiconductor structure

A method for selectively defining a region on a wall of a semiconductor structure, said method comprising the steps of:

• (a) forming a vertical structure above said semiconductor structure and spaced parallel to said wall;
• (b) providing within said vertical structure an area of one of transparence, reflection or refraction;
• and
• (c) projecting light at a given angle to said vertical structure, wherein only a portion of said light passes via said area provided in said vertical structure to impinge upon said wall of said semiconductor structure and thereby define said region on said wall;
• and
• wherein said wall comprises a sidewall of a trench formed in a semiconductor substrate, and wherein said forming step (a) includes forming said vertical structure on an upper surface of said semiconductor substrate.

A method for selectively defining a region on a vertical wall of a semiconductor structure having a semiconductor substrate with an upper surface, said vertical wall being transverse to said upper surface, said method comprising the steps of:

• (a) forming a vertical mask spaced from and parallel to said vertical wall of the semiconductor structure and of sufficient height and width to block a beam projected at a given angle at said vertical wall from hitting said vertical wall, said vertical mask being transverse to said upper surface;
• (b) providing within said vertical mask at least one aperture;
• and
• (c) projecting said beam at said given angle to said vertical wall, wherein only a portion of said beam passes through said vertical mask via said at least one aperture in said vertical mask to impinge upon said vertical wall of said semiconductor structure and thereby define said region on said vertical wall.

A method for selectively defining a region on a wall of a semiconductor structure, said method comprising the steps of:

• (a) forming a vertical mask spaced from and parallel to said wall of the semiconductor structure and of sufficient height and width to block a beam projected at a given angle at said wall from hiring said wall;
• (b) providing within said vertical mask at least one aperture;
• and
• (c) projecting said beam at said given angle to said wall, wherein only a portion of said beam passes through said vertical mask via said at least one aperture in said vertical mask to impinge upon said wall of said semiconductor structure and thereby define said region on said wall;
• and
• wherein said forming step (a) includes depositing a first layer of material of specified thickness spaced from and parallel to said wall of the semiconductor structure, and depositing a second layer of material of specified thickness spaced from and parallel to said wall of the semiconductor structure such that said second layer of material is disposed on said first layer of material, and wherein said providing step (b) includes providing multiple openings in said second layer of material.