TaN/NiFe/TaN anisotropic magnetic sensor element
AssigneeHoneywell Inc.
InventorMichael J. Haji-Sheikh
Life of this patent
Estimating the term…
Abstract
A stack of two refractory nitride layers and a magnetoresistive layer are used to facilitate electrical connection between components of a sensor. The stack of tantalum nitride and nickel iron layers are disposed over a silicide layer that is, in turn, disposed on a diffusion of conductive material within the body of a silicon layer. A titanium tungsten layer is disposed on the stack and below a subsequent layer of a conductive metal such as aluminum. A silicon nitride passivation layer is disposed over all of the other layers.
Claims14
Apparatus for providing electrical connection between components on a substrate, comprising:
- a silicon substrate;
- a conductive diffusion disposed in a surface of said silicon substrate;
- a first conductive contact material disposed on said conductive diffusion;
- a first refractory nitride material disposed on said first conductive contact material;
- a first magnetically sensitive conductive material disposed on said first refractory nitride material, said first magnetically sensitive conductive material being a NiFe alloy;
- a second refractory nitride material disposed on said first magnetically sensitive conductive material;
- an electromigration resistant material disposed on said second refractory resistant material;
- and
- a metallic layer disposed on said electromigration resistant material.
Apparatus for providing electrical connection between components on a substrate, comprising:
- a silicon substrate;
- a conductive diffusion disposed in a surface of said silicon substrate;
- a first conductive contact material disposed on said conductive diffusion, said first conductive contact material being platinum silicide;
- a first refractory nitride material disposed on said first conductive contact material, said first refractory nitride material being tantalum nitride;
- a first magnetically sensitive conductive material disposed on said first refractory nitride material, said first magnetically sensitive conductive material being NiFe;
- a second refractory nitride material disposed on said first magnetically sensitive conductive material, said second refractory nitride material is tantalum nitride;
- an electromigration resistant material disposed on said second refractory resistant material, said electromigration resistant material being TiW;
- and
- a metallic layer disposed on said electromigration resistant material, said metallic layer being aluminum.
Apparatus for providing electrical connection between components on a substrate, comprising:
- a silicon substrate;
- a conductive diffusion disposed in a surface of said silicon substrate;
- a first conductive contact material disposed on said conductive diffusion, said first conductive contact material being platinum silicide;
- a first refractory nitride material disposed on said first conductive contact material, said first refractory nitride material being tantalum nitride;
- a first magnetically sensitive conductive material disposed on said first refractory nitride material, said first magnetically sensitive conductive material being NiFe;
- a second refractory nitride material disposed on said first magnetically sensitive conductive material, said second refractory nitride material is tantalum nitride;
- an electromigration resistant material disposed on said second refractory resistant material, said electromigration resistant material being TiW;
- a metallic layer disposed on said electromigration resistant material, said metallic layer being aluminum;
- and
- a second magnetically sensitive conductive material disposed on said substrate, said second magnetically sensitive conductive material being arranged in a serpentine pattern and connected in electrical communication with said metallic layer.
Dependencies are inferred from the claim text.