Plasma jet CVD method of depositing diamond or diamond-like films
AssigneeOverseas Publishers Association
InventorsPavel P. Kulik, Vladimir V. Ivanov, Eugenia N. Zornia, John A. Gay
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Abstract
The invention relates to electronics and optical industry technology. Deposition of diamond and diamond-like films is performed in a plasma flux at atmospheric pressure at a temperature T=10.sup.4 .degree. K. A mixture of hydrocarbons and hydrogen is fed to a plasma flux formed by the confluence of a plurality of jets. As a result of the processes occurring in the plasma flux, there is deposited on the substrate a diamond or diamond-like film having a high degree of adhesion to the substrate, at a rate of 1 micron/sec, which substantially exceeds the rate of deposition of similar films by known methods.
Claims6
A method of obtaining a diamond or diamond-like film from the gas phase comprising:
- forming a plasma reaction zone, feeding a mixture of hydrocarbons and hydrogen to the zone, depositing the diamond or diamond-like film on a substrate, the reaction zone being formed by a plasma flux at atmospheric pressure and at a temperature T of about 10.sup.4 .degree. K., said flux comprising at least three axially symmetrically arranged convergent jets, said diamond or diamond-like film being formed on the substrate by passing the substrate at a high velocity at least once through the plasma flux zone.
Dependencies are inferred from the claim text.