High flow gas manifold for high rate, off-axis sputter deposition
AssigneeE. I. Du Pont de Nemours and Company
InventorsDean Willett Face, Kirsten Elizabeth Myers
Life of this patent
Estimating the term…
Abstract
An improved device for off-axis magnetron sputter deposition of inorganic oxide compounds having a sputter gun, target, substrate, gas flow means and enclosure chamber wherein the improvement comprises a hollow gas flow manifold positioned between the substrate and the target having at least one gas inlet and at least one outlet opening on the manifold, said outlet opening positioned to direct the gas flow away from the target and in the direction of the substrate, and a process for such deposition are disclosed.
Claims11
An improved device for off-axis magnetron sputter deposition of inorganic oxide compounds of the type having a sputter gun, a target having a surface, a substrate, gas flow means and an enclosure chamber;
- wherein the improvement comprises a single hollow gas manifold positioned between the substrate and the target and closer to the target than to the substrate, said manifold having at least one gas inlet and at least one outlet opening on the manifold, said outlet opening positioned such that a mixture of inert gas and reactive gas flowing from said at least one opening directs sputtered material away from the target surface and in the direction of the substrate.
Dependencies are inferred from the claim text.