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AssigneeInternational Business Machines Corporation
InventorsBruce Allen Ek, Stephen McConnell Gates, Fernando Jose Guarin, Subramanian Srikanteswara Iyer, Adrian Roger Powell
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A structure is fabricated comprising a substrate, a dielectric layer formed over the substrate, and a single crystal layer of a compound formed over the dielectric layer. The single crystal layer is formed by the chemical reaction of at least a first element with an initial single crystal layer of a second element on the dielectric layer having an initial thickness of about 100 to about 10,000 angstroms. According to another aspect, a carbide single crystal layer is provided on a substrate by depositing carbon from a solid carbon source at a low rate and low temperature, followed by reacting the carbon with the underlying layer to convert it to the carbide.
A method of forming a single crystalline layer of a compound on a first substrate comprising the steps of:
A process for forming a single crystalline layer of a carbide on a first substrate which comprises depositing carbon from a solid carbon source at a rate of about 0.01 to about 0.02 angstroms/second, and temperature of about 800 to about 1,300 K, then heating to about 1,000 to about 1,300 K to convert the carbon layer to carbide by chemical reaction with the underlying substrate.
Dependencies are inferred from the claim text.