Field emission electron gun and method for fabricating the same

A field emission electron gun comprising:

• a semiconductor substrate;
• an emitter being electrically conductive and being pointed at the top, said emitter being selectively provided on said semiconductor substrate;
• a gate insulation material being selectively provided, on said semiconductor substrate, at a predetermined area around said emitter;
• and
• a gate electrode being provided on said insulation material to encompass the top of said emitter, said gate electrode being spaced from said emitter,
• wherein the top of said emitter has the highest resistance of every other part, so that the top of said emitter has the highest heat energy of every other part when said emitter emits electrons.

A field emission electron gun comprising:

• a semiconductor substrate;
• an emitter being electrically conductive and being selectively provided on said semiconductor substrate, said emitter having the section area which is simply decreased in a direction toward the top of said emitter so that said emitter is pointed at the top, and said emitter comprising:
• a base being made of polysilicon including oxygen and being doped with an impurity;
• a head being placed on said base, said head being made of polysilicon including oxygen and being doped with an impurity;
• and
• a top region being placed on said head, said top region being doped with an impurity;
• a gate insulation material being selectively provided, on said semiconductor substrate, at a predetermined area around said emitter;
• and
• a gate electrode being provided on said insulation material to encompass the top of said emitter, said gate electrode being spaced from said emitter,
• wherein said head has the highest resistance of every other part, so that said head has the highest heat energy of every other part when said emitter emits electrons.

An emitter of a field emission electron gun, said emitter being electrically conductive and having the section area which is simply decreased in a direction toward the top of said emitter so that said emitter is pointed at the top, and said emitter comprising:

• a base being made of polysilicon including oxygen and being doped with an impurity;
• a head being placed on said base, said head being made of polysilicon including oxygen and being doped with an impurity;
• and
• a top region being placed on said head, said top region being doped with an impurity,
• wherein said head has the highest resistance of every other part, so that said head has the highest heat energy of every other part when said emitter emits electrons.